Changes

New and revised materials and properties in MPDB v9.65 as compared to v9.63

Key to property symbols (number of datasets):

D = Density	DLL = Linear thermal expansion (dL/L)
MTE = Mean coefficient of thermal expansion	CTE = Coefficient of thermal expansion (CTE)
E = Elastic/Young's modulus	G = Shear modulus
v = Poisson's ratio	K = Bulk modulus
TC = Thermal conductivity	TD = Thermal diffusivity
SH = Specific heat	HC = Heat capacity
SSC = True stress-strain curve (tension)	SSCC = True stress-strain curve (compression)
UTS = Tensile strength	YS = Yield strength (tension)
UCS = Compressive strength	YSC = Yield strength (compression)
%El = Elongation	SR = Stress rupture
FEN = Fatigue e-N curve	FSN = Fatigue S-N curve
CRS = Creep strength	IC = Isochronous creep
HE = Hemispherical total emissivity	NE = Normal total emissivity
VP = Vapor pressure	Vis = Viscosity
ST = Surface tension	RHO = Electrical resistivity
SIGMA = Electrical conductivity	SV = Specific volume
AV = Apparent viscosity	FM = Flexural modulus
FS = Flexural strength	ESSC = Engineering stress-strain curve (tension)
ESSCC = Engineering stress-strain curve (compression)	CRM = Creep modulus
RPB = Relative permeability	AP = Absolute permeability
BH = B-H curve	HB = H-B curve
CL = Core loss	EP = Exciting Power
DCRPT = Relative permittivity	DF = Dissipation factor
RIW = Refractive index vs WL	RIT = Refractive index vs T
S = Seebeck coefficient

N indicates the data is new, R indicates the data has been revised, * indicates the data is the RT value only

125 new materials, 1418 new property sets, 15 revised properties, and 60 new RT values

(Bi₂Te₃)ₓ - (Sb₂Te₃)₁₋ₓ (New)	(GeTe)₀.₉₉(Sb₂Te₃)₀.₀₁ (New)	(GeTe)₁₋ₓ(Sb₂Te₃)ₓ (New)	(MnSi₁.₇₃)₁₋ₓ - (FeSi₂)ₓ (New)	(Pb₀.₉₅Na₀.₀₅Te)₁₋ₓ - (CoSe₂)ₓ (New)
(Pb₀.₉₈Na₀.₀₂Te)₁₋ₓ - (CoSe₂)ₓ (New)	(Pb₀.₉₈Na₀.₀₂Te)₁₋ₓ - (PbSe)ₓ (New)	(PbTe - 30% SnSe) + Cu (New)	(PbTe)₀.₉ - (PbS)₀.₁ + y% Cu (New)	(PbTe)₁₋ₓ - (CoTe)ₓ (New)
(PbTe)₁₋ₓ - (PbS)ₓ + 1% Cu (New)	(PbTe)₁₋ₓ - (Sb₂Te₃)ₓ (New)	Ba₃.₄₅Nd₉.₇Ti₁₈O₅₄ (New)	Ba₅.₁₉Nd₈.₅₄Ti₁₈O₅₄ (New)	Ba₆Nd₈Ti₁₈O₅₄ (New)
Ba₈Al₁₅Si₃₁ (New)	Ba₈Cu₄.₈Si₄₁.₂ (New)	Bi₀.₄₂Sb₁.₅₅Te₃ (Ga and Ag dopants) (New)	Bi₀.₄₇₅Sb₁.₄₂₅Sn₀.₁Te₃ (New)	Bi₀.₄Sb₁.₆Te₃ (Sn and ZnO doped) (New)
Bi₀.₅Sb₁.₅Te₃ (Sn and Te doped)	Bi₁.₇Fe₀.₃Te₃ (New)	Bi₁.₈Fe₀.₂Te₃ (New)	Bi₁.₉Fe₀.₁Te₃ (New)	Bi₂Te₂.₇Se₀.₃ (dopants)
Bi₂Te₂.₈₅Se₀.₁₅ (Cu doped) (New)	Bi₂Te₂.₈Se₀.₂ (New)	Bi₂Te₂.₉₃Se₀.₀₇ (New)	Bi₂Te₂.₉₅Se₀.₀₅ (New)	Bi₂Te₂.₉₇Se₀.₀₃ (New)
Bi₂Te₂.₉Se₀.₁ (New)	Bi₂Te₃ (Pb doped) (New)	Bi₂Te₃ + Cu composites (New)	Bi₂Te₃ + Mo₂C MXene (New)	Bi₂Te₃ + SiC (New)
Bi₂Te₃ + Te nanostrings	Bi₂Te₃	BiCuSeO (Zn doped) (Revised)	Bismuth	Ca₀.₁Eu₀.₉Zn₂Sb₂ (New)
Ca₀.₃Eu₀.₇Zn₂Sb₂ (New)	Ca₀.₇Eu₀.₃Zn₂Sb₂ (New)	Ca₀.₉Eu₀.₁Zn₂Sb₂ (New)	CaZn₂Sb₂ (New)	CdO (Co doped) (New)
CdO	Ce₀.₂₅Yb₀.₇₅Fe₃.₅Co₀.₅Sb₁₂ (New)	Ce₀.₂₅Yb₀.₇₅Fe₃CoSb₁₂ (New)	Ce₀.₅Yb₀.₅Fe₃.₅Co₀.₅Sb₁₂ (New)	Ce₀.₅Yb₀.₅Fe₃CoSb₁₂ (New)
Ce₀.₆Fe₂Co₂Sb₁₂ (New)	Ce₀.₇₅Yb₀.₂₅Fe₃.₅Co₀.₅Sb₁₂ (New)	Ce₀.₇₅Yb₀.₂₅Fe₃CoSb₁₂ (New)	Ce₀.₈Fe₃.₅Ni₀.₅Sb₁₂ (New)	Ce₀.₈Fe₃.₇₅Ni₀.₂₅Sb₁₂ (New)
Ce₀.₉Fe₃.₅Ni₀.₅Sb₁₂ (New)	Ce₀.₉Fe₃.₇₅Ni₀.₂₅Sb₁₂ (New)	CeFe₃.₅Ni₀.₅Sb₁₂ (New)	CeFe₃.₇₅Ni₀.₂₅Sb₁₂ (New)	CeFe₄Sb₁₂ (Te doped) (New)
CoSb₃ (Revised)	Cu₁₁.₅Ni₀.₅Sb₃.₂₅Te₀.₇₅S₁₃ (New)	Cu₁₁.₅Ni₀.₅Sb₃.₅Te₀.₅S₁₃ (New)	Cu₁₁.₅Ni₀.₅Sb₃TeS₁₃ (New)	Cu₁₁.₅Zn₀.₅Sb₂.₇₅Te₁.₂₅S₁₃ (New)
Cu₁₁.₅Zn₀.₅Sb₃TeS₁₃ (New)	Cu₁₁ZnSb₃.₅Te₀.₅S₁₃ (New)	Cu₂SnS₃	Cu₂ZnGeSe₄ (In doped) (New)	CuFeS₁.₅Se₀.₅ (New)
CuFeS₁.₆Se₀.₄ (New)	CuFeS₁.₇Se₀.₃ (New)	CuFeS₁.₈Se₀.₂ (New)	CuFeS₁.₉Se₀.₁ (New)	CuFeS₂
EuZn₂Sb₂ (New)	Fe₁.₅Co₂.₅Sb₁₂ (New)	Fe₂V₀.₈Al₁.₂ (New)	Fe₂V₀.₉₄Al₁.₀₆ (New)	Fe₂V₀.₉₆Al₁.₀₄ (New)
Fe₂V₀.₉Al₁.₁ (New)	Fe₂V₁.₀₄Al₀.₉₆ (New)	Fe₂V₁.₀₆Al₀.₉₄ (New)	Fe₂V₁.₁Al₀.₉ (New)	Fe₂V₁.₂Al₀.₈ (New)
Fe₂VAl (New)	Ge₁₋ₓTeInₓ (New)	Ge₂Sb₂Te₅	Ge₃Sb₂Te₆ (New)	GeSb₂Te₄ (New)
GeSb₄Te₇ (New)	GeSb₆Te₁₀ (New)	GeTe	InGaZnO amorphous film (New)	La₀.₂₅Pr₀.₇₅Fe₃.₅Co₀.₅Sb₁₂ (New)
La₀.₂₅Pr₀.₇₅Fe₃.₇₅Co₀.₂₅Sb₁₂ (New)	La₀.₂₅Pr₀.₇₅Fe₃CoSb₁₂ (New)	La₀.₂₅Pr₀.₇₅Fe₄Sb₁₂ (New)	La₀.₇₅Pr₀.₂₅Fe₃.₅Co₀.₅Sb₁₂ (New)	La₀.₇₅Pr₀.₂₅Fe₃.₇₅Co₀.₂₅Sb₁₂ (New)
La₀.₇₅Pr₀.₂₅Fe₃CoSb₁₂ (New)	La₀.₇₅Pr₀.₂₅Fe₄Sb₁₂ (New)	Mg₂Si (Sb doped)	Mg₂Si₀.₂Sn₀.₈ (Li dopant) (New)	Mg₂Si₀.₃Sn₀.₇ (Bi and Li dopants)
Mg₂Si₀.₄Sn₀.₆ (Li dopant) (New)	Mn₂.₇Cr₀.₃Si₄Al₂₋ₓInₓ (New)	MnTe (New)	Mo₂C MXene + Al binder (New)	Nd₀.₈Fe₃.₅Co₀.₅Sb₁₂ (New)
Nd₀.₈Fe₃CoSb₁₂ (New)	Nd₀.₈Fe₄Sb₁₂ (New)	Nd₀.₉Fe₃.₅Co₀.₅Sb₁₂ (New)	Nd₀.₉Fe₃CoSb₁₂ (New)	Nd₀.₉Fe₄Sb₁₂ (New)
NdFe₃.₅Co₀.₅Sb₁₂ (New)	NdFe₃CoSb₁₂ (New)	NdFe₄Sb₁₂ (New)	Pb₀.₉₅Sb₀.₀₁₅Te + SnSe (New)	Pb₀.₉₈Na₀.₀₂Te + MgTe (New)
PbS	PbSe	PbTe (Al doped) (New)	PbTe (Sb doped) (Revised)	PbTe (Sb/Se co-doped) (New)
PbTe (Se doped) (New)	PbTe (Tl doped) (New)	PbTe + Cu₂Se composites (New)	PbTe (Revised)	PtSb₂ (Te doped) (New)
Sb₂Se₃ (New)	Sb₂Te₃ (dopants) (New)	Sb₂Te₃	SnSe	SnTe (Sb doped)
SrTiO₃ - 0.1 La₀.₃₃NbO₃ (New)	SrTiO₃ - 0.2 La₀.₃₃NbO₃ (New)	SrTiO₃ - 0.3 La₀.₃₃NbO₃ (New)	SrTiO₃	Tl₀.₂Fe₁.₅Co₂.₅Sb₁₂ (New)
Tl₀.₄Fe₁.₅Co₂.₅Sb₁₂ (New)	Tl₀.₅Fe₁.₅Co₂.₅Sb₁₂ (New)	Tl₀.₆Fe₁.₅Co₂.₅Sb₁₂	Tl₀.₇Fe₁.₅Co₂.₅Sb₁₂	V₁₇Ge₃₁ (New)
YbAl₃.₁ (New)	YbAl₃.₂ (New)	YbAl₃.₃ (New)	YbAl₃ (New)

(Bi₂Te₃)ₓ - (Sb₂Te₃)₁₋ₓ (New)

    TC        :    solid : x = 0.15, carrier concentration = 4.544 x 10¹⁹/cm3, mobility = 2.60 cm2/(V-s) : 15486|1|0|0
    TC        :    solid : x = 0.2, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|1|0|1
    TC        :    solid : x = 0.25, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|1|0|2
    TC        :    solid : x = 0.3, carrier concentration = 0.434 x 10¹⁹/cm3, mobility = 1.46 cm2/(V-s) : 15486|1|0|3
    TC        :    solid : x = 0.35, carrier concentration = -3.401 x 10¹⁹/cm3, mobility = 0.33 cm2/(V-s) : 15486|1|0|4
    RHO       :    solid : x = 0.15, carrier concentration = 4.544 x 10¹⁹/cm3, mobility = 2.60 cm2/(V-s) : 15486|2|0|0
    RHO       :    solid : x = 0.2, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|2|0|1
    RHO       :    solid : x = 0.25, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|2|0|2
    RHO       :    solid : x = 0.3, carrier concentration = 0.434 x 10¹⁹/cm3, mobility = 1.46 cm2/(V-s) : 15486|2|0|3
    RHO       :    solid : x = 0.35, carrier concentration = -3.401 x 10¹⁹/cm3, mobility = 0.33 cm2/(V-s) : 15486|2|0|4
    SIGMA    :    solid : x = 0.15, carrier concentration = 4.544 x 10¹⁹/cm3, mobility = 2.60 cm2/(V-s) : 15486|10|0|0
    SIGMA    :    solid : x = 0.2, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|10|0|1
    SIGMA    :    solid : x = 0.25, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|10|0|2
    SIGMA    :    solid : x = 0.3, carrier concentration = 0.434 x 10¹⁹/cm3, mobility = 1.46 cm2/(V-s) : 15486|10|0|3
    SIGMA    :    solid : x = 0.35, carrier concentration = -3.401 x 10¹⁹/cm3, mobility = 0.33 cm2/(V-s) : 15486|10|0|4
    S         :    solid : x = 0.15, carrier concentration = 4.544 x 10¹⁹/cm3, mobility = 2.60 cm2/(V-s) : 15486|48|0|0
    S         :    solid : x = 0.2, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|48|0|1
    S         :    solid : x = 0.25, carrier concentration = 2.466 x 10¹⁹/cm3, mobility = 2.48 cm2/(V-s) : 15486|48|0|2
    S         :    solid : x = 0.3, carrier concentration = 0.434 x 10¹⁹/cm3, mobility = 1.46 cm2/(V-s) : 15486|48|0|3
    S         :    solid : x = 0.35, carrier concentration = -3.401 x 10¹⁹/cm3, mobility = 0.33 cm2/(V-s) : 15486|48|0|4

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(GeTe)₀.₉₉(Sb₂Te₃)₀.₀₁ (New)

    RHO       :    bulk material : carrier concentration = 4.3 x 10²⁰/cm3 : 15422|2|0|0
    SIGMA    :    bulk material : carrier concentration = 4.3 x 10²⁰/cm3 : 15422|10|0|0
    D     (*):    solid : 15422|24|0|-1
    S         :    bulk material : carrier concentration = 4.3 x 10²⁰/cm3 : 15422|48|0|0

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(GeTe)₁₋ₓ(Sb₂Te₃)ₓ (New)

    TC        :    x = 0, undoped : hot-pressed : 15470|1|0|0
    TC        :    x = 0.02 : hot-pressed : 15470|1|1|0
    TC        :    x = 0.04 : hot-pressed : 15470|1|2|0
    TC        :    x = 0.06 : hot-pressed : 15470|1|3|0
    RHO       :    x = 0, undoped : hot-pressed : 15470|2|0|0
    RHO       :    x = 0.02 : hot-pressed : 15470|2|1|0
    RHO       :    x = 0.04 : hot-pressed : 15470|2|2|0
    RHO       :    x = 0.06 : hot-pressed : 15470|2|3|0
    SIGMA    :    x = 0, undoped : hot-pressed : 15470|10|0|0
    SIGMA    :    x = 0.02 : hot-pressed : 15470|10|1|0
    SIGMA    :    x = 0.04 : hot-pressed : 15470|10|2|0
    SIGMA    :    x = 0.06 : hot-pressed : 15470|10|3|0
    S         :    x = 0, undoped : hot-pressed : 15470|48|0|0
    S         :    x = 0.02 : hot-pressed : 15470|48|1|0
    S         :    x = 0.04 : hot-pressed : 15470|48|2|0
    S         :    x = 0.06 : hot-pressed : 15470|48|3|0

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(MnSi₁.₇₃)₁₋ₓ - (FeSi₂)ₓ (New)

    TC        :    x = 0 : carrier concentration = 2.59 x 10²¹/cm3, mobility = 1.39 cm2/(V-s) : 15463|1|0|0
    TC        :    x = 0.01 : carrier concentration = 2.3 x 10²¹/cm3, mobility = 1.45 cm2/(V-s) : 15463|1|1|0
    TC        :    x = 0.05 : carrier concentration = 1.85 x 10²¹/cm3, mobility = 1.69 cm2/(V-s) : 15463|1|2|0
    TC        :    x = 0.1 : carrier concentration = 1.87 x 10²¹/cm3, mobility = 0.79 cm2/(V-s) : 15463|1|3|0
    TC        :    x = 0.2 : carrier concentration = 1.06 x 10²¹/cm3, mobility = 0.33 cm2/(V-s) : 15463|1|4|0
    TC        :    x = 0.3 : 15463|1|5|-1
    RHO       :    x = 0 : carrier concentration = 2.59 x 10²¹/cm3, mobility = 1.39 cm2/(V-s) : 15463|2|0|0
    RHO       :    x = 0.01 : carrier concentration = 2.3 x 10²¹/cm3, mobility = 1.45 cm2/(V-s) : 15463|2|1|0
    RHO       :    x = 0.05 : carrier concentration = 1.85 x 10²¹/cm3, mobility = 1.69 cm2/(V-s) : 15463|2|2|0
    RHO       :    x = 0.1 : carrier concentration = 1.87 x 10²¹/cm3, mobility = 0.79 cm2/(V-s) : 15463|2|3|0
    RHO       :    x = 0.2 : carrier concentration = 1.06 x 10²¹/cm3, mobility = 0.33 cm2/(V-s) : 15463|2|4|0
    RHO       :    x = 0.3 : 15463|2|5|-1
    SIGMA    :    x = 0 : carrier concentration = 2.59 x 10²¹/cm3, mobility = 1.39 cm2/(V-s) : 15463|10|0|0
    SIGMA    :    x = 0.01 : carrier concentration = 2.3 x 10²¹/cm3, mobility = 1.45 cm2/(V-s) : 15463|10|1|0
    SIGMA    :    x = 0.05 : carrier concentration = 1.85 x 10²¹/cm3, mobility = 1.69 cm2/(V-s) : 15463|10|2|0
    SIGMA    :    x = 0.1 : carrier concentration = 1.87 x 10²¹/cm3, mobility = 0.79 cm2/(V-s) : 15463|10|3|0
    SIGMA    :    x = 0.2 : carrier concentration = 1.06 x 10²¹/cm3, mobility = 0.33 cm2/(V-s) : 15463|10|4|0
    SIGMA    :    x = 0.3 : 15463|10|5|-1
    S         :    x = 0 : carrier concentration = 2.59 x 10²¹/cm3, mobility = 1.39 cm2/(V-s) : 15463|48|0|0
    S         :    x = 0.01 : carrier concentration = 2.3 x 10²¹/cm3, mobility = 1.45 cm2/(V-s) : 15463|48|1|0
    S         :    x = 0.05 : carrier concentration = 1.85 x 10²¹/cm3, mobility = 1.69 cm2/(V-s) : 15463|48|2|0
    S         :    x = 0.1 : carrier concentration = 1.87 x 10²¹/cm3, mobility = 0.79 cm2/(V-s) : 15463|48|3|0
    S         :    x = 0.2 : carrier concentration = 1.06 x 10²¹/cm3, mobility = 0.33 cm2/(V-s) : 15463|48|4|0
    S         :    x = 0.3 : 15463|48|5|-1

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(Pb₀.₉₅Na₀.₀₅Te)₁₋ₓ - (CoSe₂)ₓ (New)

    TC        :    x = 0.05 : carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 185 cm2/(V-s) : 15483|1|0|0
    TC        :    x = 0.1 : carrier concentration = 3.3 x 10²⁰/cm3, mobility = 32 cm2/(V-s) : 15483|1|1|0
    TC        :    x = 0.15 : carrier concentration = 3.1 x 10²⁰/cm3, mobility = 37 cm2/(V-s) : 15483|1|2|0
    RHO       :    x = 0.05 : carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 185 cm2/(V-s) : 15483|2|0|0
    RHO       :    x = 0.1 : carrier concentration = 3.3 x 10²⁰/cm3, mobility = 32 cm2/(V-s) : 15483|2|1|0
    RHO       :    x = 0.15 : carrier concentration = 3.1 x 10²⁰/cm3, mobility = 37 cm2/(V-s) : 15483|2|2|0
    SIGMA    :    x = 0.05 : carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 185 cm2/(V-s) : 15483|10|0|0
    SIGMA    :    x = 0.1 : carrier concentration = 3.3 x 10²⁰/cm3, mobility = 32 cm2/(V-s) : 15483|10|1|0
    SIGMA    :    x = 0.15 : carrier concentration = 3.1 x 10²⁰/cm3, mobility = 37 cm2/(V-s) : 15483|10|2|0
    S         :    x = 0.05 : carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 185 cm2/(V-s) : 15483|48|0|0
    S         :    x = 0.1 : carrier concentration = 3.3 x 10²⁰/cm3, mobility = 32 cm2/(V-s) : 15483|48|1|0
    S         :    x = 0.15 : carrier concentration = 3.1 x 10²⁰/cm3, mobility = 37 cm2/(V-s) : 15483|48|2|0

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(Pb₀.₉₈Na₀.₀₂Te)₁₋ₓ - (CoSe₂)ₓ (New)

    TC        :    x = 0.0, undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15485|1|0|0
    TC        :    x = 0.05 : carrier concentration = 1 x 10²⁰/cm3, mobility = 147 cm2/(V-s) : 15485|1|1|0
    TC        :    x = 0.1 : carrier concentration = 9.5 x 10¹⁹/cm3, mobility = 108 cm2/(V-s) : 15485|1|2|0
    TC        :    x = 0.15 : carrier concentration = 1.2 x 10²⁰/cm3, mobility = 56 cm2/(V-s) : 15485|1|3|0
    RHO       :    x = 0.0, undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15485|2|0|0
    RHO       :    x = 0.05 : carrier concentration = 1 x 10²⁰/cm3, mobility = 147 cm2/(V-s) : 15485|2|1|0
    RHO       :    x = 0.1 : carrier concentration = 9.5 x 10¹⁹/cm3, mobility = 108 cm2/(V-s) : 15485|2|2|0
    RHO       :    x = 0.15 : carrier concentration = 1.2 x 10²⁰/cm3, mobility = 56 cm2/(V-s) : 15485|2|3|0
    SH        :    x = 0.0, undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15485|9|0|0
    SIGMA    :    x = 0.0, undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15485|10|0|0
    SIGMA    :    x = 0.05 : carrier concentration = 1 x 10²⁰/cm3, mobility = 147 cm2/(V-s) : 15485|10|1|0
    SIGMA    :    x = 0.1 : carrier concentration = 9.5 x 10¹⁹/cm3, mobility = 108 cm2/(V-s) : 15485|10|2|0
    SIGMA    :    x = 0.15 : carrier concentration = 1.2 x 10²⁰/cm3, mobility = 56 cm2/(V-s) : 15485|10|3|0
    D     (*):    x = 0.0, undoped : 15485|24|0|-1
    TD        :    x = 0.0, undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15485|25|0|0
    S         :    x = 0.0, undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15485|48|0|0
    S         :    x = 0.05 : carrier concentration = 1 x 10²⁰/cm3, mobility = 147 cm2/(V-s) : 15485|48|1|0
    S         :    x = 0.1 : carrier concentration = 9.5 x 10¹⁹/cm3, mobility = 108 cm2/(V-s) : 15485|48|2|0

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(Pb₀.₉₈Na₀.₀₂Te)₁₋ₓ - (PbSe)ₓ (New)

    TC        :    x = 0.0 (Pb0.98Na0.02Te) : 15554|1|0|-1
    TC        :    x = 0.1 : 15554|1|1|-1
    TC        :    x = 0.2 : 15554|1|2|-1
    TC        :    x = 0.3 : 15554|1|3|-1
    TC        :    x = 0.4 : 15554|1|4|-1
    TC        :    x = 0.5 : 15554|1|5|-1
    TC        :    x = 0.6 : 15554|1|6|-1
    TC        :    x = 0.7 : 15554|1|7|-1
    TC        :    x = 0.8 : 15554|1|8|-1
    TC        :    x = 0.9 : 15554|1|9|-1
    TC        :    x = 1 (PbSe) : 15554|1|10|-1
    RHO       :    x = 0.0 (Pb0.98Na0.02Te) : 15554|2|0|-1
    RHO       :    x = 0.1 : 15554|2|1|-1
    RHO       :    x = 0.2 : 15554|2|2|-1
    RHO       :    x = 0.3 : 15554|2|3|-1
    RHO       :    x = 0.4 : 15554|2|4|-1
    RHO       :    x = 0.5 : 15554|2|5|-1
    RHO       :    x = 0.6 : 15554|2|6|-1
    RHO       :    x = 0.7 : 15554|2|7|-1
    RHO       :    x = 0.8 : 15554|2|8|-1
    RHO       :    x = 0.9 : 15554|2|9|-1
    RHO       :    x = 1 (PbSe) : 15554|2|10|-1
    SIGMA    :    x = 0.0 (Pb0.98Na0.02Te) : 15554|10|0|-1
    SIGMA    :    x = 0.1 : 15554|10|1|-1
    SIGMA    :    x = 0.2 : 15554|10|2|-1
    SIGMA    :    x = 0.3 : 15554|10|3|-1
    SIGMA    :    x = 0.4 : 15554|10|4|-1
    SIGMA    :    x = 0.5 : 15554|10|5|-1
    SIGMA    :    x = 0.6 : 15554|10|6|-1
    SIGMA    :    x = 0.7 : 15554|10|7|-1
    SIGMA    :    x = 0.8 : 15554|10|8|-1
    SIGMA    :    x = 0.9 : 15554|10|9|-1
    SIGMA    :    x = 1 (PbSe) : 15554|10|10|-1
    S         :    x = 0.0 (Pb0.98Na0.02Te) : 15554|48|0|-1
    S         :    x = 0.1 : 15554|48|1|-1
    S         :    x = 0.2 : 15554|48|2|-1
    S         :    x = 0.3 : 15554|48|3|-1
    S         :    x = 0.4 : 15554|48|4|-1
    S         :    x = 0.5 : 15554|48|5|-1
    S         :    x = 0.6 : 15554|48|6|-1
    S         :    x = 0.7 : 15554|48|7|-1
    S         :    x = 0.8 : 15554|48|8|-1
    S         :    x = 0.9 : 15554|48|9|-1
    S         :    x = 1 (PbSe) : 15554|48|10|-1

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(PbTe - 30% SnSe) + Cu (New)

    TC        :    Cu doped : 0.75%, carrier concentration = 2.48 x 10¹⁸/cm3, mobility = 1450 cm2/(V-s) : 15560|1|0|0
    TC        :    Cu doped : 1%, carrier concentration = 1.34 x 10¹⁸/cm3, mobility = 2560 cm2/(V-s) : 15560|1|0|1
    TC        :    Cu doped : 1.25%, carrier concentration = 1.68 x 10¹⁸/cm3, mobility = 2140 cm2/(V-s) : 15560|1|0|2
    TC        :    Cu doped : 1.5%, carrier concentration = 1.57 x 10¹⁸/cm3, mobility = 2400 cm2/(V-s) : 15560|1|0|3
    TC        :    Cu doped : 2%, carrier concentration = 0.77 x 10¹⁸/cm3, mobility = 3600 cm2/(V-s) : 15560|1|0|4
    RHO       :    Cu doped : 0.75%, carrier concentration = 2.48 x 10¹⁸/cm3, mobility = 1450 cm2/(V-s) : 15560|2|0|0
    RHO       :    Cu doped : 1%, carrier concentration = 1.34 x 10¹⁸/cm3, mobility = 2560 cm2/(V-s) : 15560|2|0|1
    RHO       :    Cu doped : 1.25%, carrier concentration = 1.68 x 10¹⁸/cm3, mobility = 2140 cm2/(V-s) : 15560|2|0|2
    RHO       :    Cu doped : 1.5%, carrier concentration = 1.57 x 10¹⁸/cm3, mobility = 2400 cm2/(V-s) : 15560|2|0|3
    RHO       :    Cu doped : 2%, carrier concentration = 0.77 x 10¹⁸/cm3, mobility = 3600 cm2/(V-s) : 15560|2|0|4
    SIGMA    :    Cu doped : 0.75%, carrier concentration = 2.48 x 10¹⁸/cm3, mobility = 1450 cm2/(V-s) : 15560|10|0|0
    SIGMA    :    Cu doped : 1%, carrier concentration = 1.34 x 10¹⁸/cm3, mobility = 2560 cm2/(V-s) : 15560|10|0|1
    SIGMA    :    Cu doped : 1.25%, carrier concentration = 1.68 x 10¹⁸/cm3, mobility = 2140 cm2/(V-s) : 15560|10|0|2
    SIGMA    :    Cu doped : 1.5%, carrier concentration = 1.57 x 10¹⁸/cm3, mobility = 2400 cm2/(V-s) : 15560|10|0|3
    SIGMA    :    Cu doped : 2%, carrier concentration = 0.77 x 10¹⁸/cm3, mobility = 3600 cm2/(V-s) : 15560|10|0|4
    S         :    Cu doped : 0.75%, carrier concentration = 2.48 x 10¹⁸/cm3, mobility = 1450 cm2/(V-s) : 15560|48|0|0
    S         :    Cu doped : 1%, carrier concentration = 1.34 x 10¹⁸/cm3, mobility = 2560 cm2/(V-s) : 15560|48|0|1
    S         :    Cu doped : 1.25%, carrier concentration = 1.68 x 10¹⁸/cm3, mobility = 2140 cm2/(V-s) : 15560|48|0|2
    S         :    Cu doped : 1.5%, carrier concentration = 1.57 x 10¹⁸/cm3, mobility = 2400 cm2/(V-s) : 15560|48|0|3
    S         :    Cu doped : 2%, carrier concentration = 0.77 x 10¹⁸/cm3, mobility = 3600 cm2/(V-s) : 15560|48|0|4

return to listing

(PbTe)₀.₉ - (PbS)₀.₁ + y% Cu (New)

    TC        :    0.25% Cu : carrier concentration = 1.63 x 10¹⁹/cm3, mobility = 995 cm2/(V-s) : 15563|1|0|0
    TC        :    0.3% Cu : carrier concentration = 1.24 x 10¹⁹/cm3, mobility = 1005 cm2/(V-s) : 15563|1|1|0
    TC        :    0.35% Cu : carrier concentration = 1.23 x 10¹⁹/cm3, mobility = 1000 cm2/(V-s) : 15563|1|2|0
    TC        :    0.5% Cu : carrier concentration = 1.07 x 10¹⁹/cm3, mobility = 1060 cm2/(V-s) : 15563|1|3|0
    TC        :    0.75% Cu : carrier concentration = 1.53 x 10¹⁹/cm3, mobility = 985 cm2/(V-s) : 15563|1|4|0
    TC        :    1% Cu : carrier concentration = 2 x 10¹⁹/cm3, mobility = 860 cm2/(V-s) : 15563|1|5|0
    RHO       :    0.25% Cu : carrier concentration = 1.63 x 10¹⁹/cm3, mobility = 995 cm2/(V-s) : 15563|2|0|0
    RHO       :    0.3% Cu : carrier concentration = 1.24 x 10¹⁹/cm3, mobility = 1005 cm2/(V-s) : 15563|2|1|0
    RHO       :    0.35% Cu : carrier concentration = 1.23 x 10¹⁹/cm3, mobility = 1000 cm2/(V-s) : 15563|2|2|0
    RHO       :    0.5% Cu : carrier concentration = 1.07 x 10¹⁹/cm3, mobility = 1060 cm2/(V-s) : 15563|2|3|0
    RHO       :    0.75% Cu : carrier concentration = 1.53 x 10¹⁹/cm3, mobility = 985 cm2/(V-s) : 15563|2|4|0
    RHO       :    1% Cu : carrier concentration = 2 x 10¹⁹/cm3, mobility = 860 cm2/(V-s) : 15563|2|5|0
    SIGMA    :    0.25% Cu : carrier concentration = 1.63 x 10¹⁹/cm3, mobility = 995 cm2/(V-s) : 15563|10|0|0
    SIGMA    :    0.3% Cu : carrier concentration = 1.24 x 10¹⁹/cm3, mobility = 1005 cm2/(V-s) : 15563|10|1|0
    SIGMA    :    0.35% Cu : carrier concentration = 1.23 x 10¹⁹/cm3, mobility = 1000 cm2/(V-s) : 15563|10|2|0
    SIGMA    :    0.5% Cu : carrier concentration = 1.07 x 10¹⁹/cm3, mobility = 1060 cm2/(V-s) : 15563|10|3|0
    SIGMA    :    0.75% Cu : carrier concentration = 1.53 x 10¹⁹/cm3, mobility = 985 cm2/(V-s) : 15563|10|4|0
    SIGMA    :    1% Cu : carrier concentration = 2 x 10¹⁹/cm3, mobility = 860 cm2/(V-s) : 15563|10|5|0
    D     (*):    0.25% Cu : 15563|24|0|-1
    D     (*):    0.3% Cu : 15563|24|1|-1
    D     (*):    0.35% Cu : 15563|24|2|-1
    D     (*):    0.5% Cu : 15563|24|3|-1
    D     (*):    0.75% Cu : 15563|24|4|-1
    D     (*):    1% Cu : 15563|24|5|-1
    S         :    0.25% Cu : carrier concentration = 1.63 x 10¹⁹/cm3, mobility = 995 cm2/(V-s) : 15563|48|0|0
    S         :    0.3% Cu : carrier concentration = 1.24 x 10¹⁹/cm3, mobility = 1005 cm2/(V-s) : 15563|48|1|0
    S         :    0.35% Cu : carrier concentration = 1.23 x 10¹⁹/cm3, mobility = 1000 cm2/(V-s) : 15563|48|2|0
    S         :    0.5% Cu : carrier concentration = 1.07 x 10¹⁹/cm3, mobility = 1060 cm2/(V-s) : 15563|48|3|0
    S         :    0.75% Cu : carrier concentration = 1.53 x 10¹⁹/cm3, mobility = 985 cm2/(V-s) : 15563|48|4|0
    S         :    1% Cu : carrier concentration = 2 x 10¹⁹/cm3, mobility = 860 cm2/(V-s) : 15563|48|5|0

return to listing

(PbTe)₁₋ₓ - (CoTe)ₓ (New)

    RHO       :    x = 0.0, undoped : carrier concentration = 3.98 x 10¹⁸/cm3, mobility = 0.63 cm2/(V-s) : 15549|2|0|0
    RHO       :    x = 0.05 : carrier concentration = 4.13 x 10¹⁸/cm3, mobility = 1.31 cm2/(V-s) : 15549|2|1|0
    RHO       :    x = 0.1 : carrier concentration = 6.77 x 10¹⁸/cm3, mobility = 0.44 cm2/(V-s) : 15549|2|2|0
    RHO       :    x = 0.12 : carrier concentration = 5.68 x 10¹⁹/cm3, mobility = 6.15 cm2/(V-s) : 15549|2|3|0
    RHO       :    x = 0.14 : carrier concentration = 5.68 x 10¹⁹/cm3, mobility = 6.15 cm2/(V-s) : 15549|2|4|0
    RHO       :    x = 0.18 : carrier concentration = 5.82 x 10¹⁹/cm3, mobility = 3.94 cm2/(V-s) : 15549|2|5|0
    SIGMA    :    x = 0.0, undoped : carrier concentration = 3.98 x 10¹⁸/cm3, mobility = 0.63 cm2/(V-s) : 15549|10|0|0
    SIGMA    :    x = 0.05 : carrier concentration = 4.13 x 10¹⁸/cm3, mobility = 1.31 cm2/(V-s) : 15549|10|1|0
    SIGMA    :    x = 0.1 : carrier concentration = 6.77 x 10¹⁸/cm3, mobility = 0.44 cm2/(V-s) : 15549|10|2|0
    SIGMA    :    x = 0.12 : carrier concentration = 5.68 x 10¹⁹/cm3, mobility = 6.15 cm2/(V-s) : 15549|10|3|0
    SIGMA    :    x = 0.14 : carrier concentration = 5.68 x 10¹⁹/cm3, mobility = 6.15 cm2/(V-s) : 15549|10|4|0
    SIGMA    :    x = 0.18 : carrier concentration = 5.82 x 10¹⁹/cm3, mobility = 3.94 cm2/(V-s) : 15549|10|5|0
    S         :    x = 0.0, undoped : carrier concentration = 3.98 x 10¹⁸/cm3, mobility = 0.63 cm2/(V-s) : 15549|48|0|0
    S         :    x = 0.05 : carrier concentration = 4.13 x 10¹⁸/cm3, mobility = 1.31 cm2/(V-s) : 15549|48|1|0
    S         :    x = 0.1 : carrier concentration = 6.77 x 10¹⁸/cm3, mobility = 0.44 cm2/(V-s) : 15549|48|2|0
    S         :    x = 0.12 : 99.6% dense : 15549|48|3|0
    S         :    x = 0.14 : carrier concentration = 5.68 x 10¹⁹/cm3, mobility = 6.15 cm2/(V-s) : 15549|48|4|0
    S         :    x = 0.18 : carrier concentration = 5.82 x 10¹⁹/cm3, mobility = 3.94 cm2/(V-s) : 15549|48|5|0

return to listing

(PbTe)₁₋ₓ - (PbS)ₓ + 1% Cu (New)

    TC        :    x = 0.1 : 15562|1|0|-1
    TC        :    x = 0.2 : 15562|1|1|-1
    TC        :    x = 0.3 : 15562|1|2|-1
    TC        :    x = 0.4 : 15562|1|3|-1
    RHO       :    x = 0.1 : 15562|2|0|-1
    RHO       :    x = 0.2 : 15562|2|1|-1
    RHO       :    x = 0.3 : 15562|2|2|-1
    RHO       :    x = 0.4 : 15562|2|3|-1
    SIGMA    :    x = 0.1 : 15562|10|0|-1
    SIGMA    :    x = 0.2 : 15562|10|1|-1
    SIGMA    :    x = 0.3 : 15562|10|2|-1
    SIGMA    :    x = 0.4 : 15562|10|3|-1
    D     (*):    x = 0.1 : 15562|24|0|-1
    D     (*):    x = 0.2 : 15562|24|1|-1
    D     (*):    x = 0.3 : 15562|24|2|-1
    D     (*):    x = 0.4 : 15562|24|3|-1
    S         :    x = 0.1 : 15562|48|0|-1
    S         :    x = 0.2 : 15562|48|1|-1
    S         :    x = 0.3 : 15562|48|2|-1
    S         :    x = 0.4 : 15562|48|3|-1

return to listing

(PbTe)₁₋ₓ - (Sb₂Te₃)ₓ (New)

    TC        :    x = 0.0055 : carrier concentration = 1.9 x 10¹⁸/cm3 : 15558|1|0|0
    TC        :    x = 0.008 : carrier concentration = 1.03 x 10¹⁹/cm3 : 15558|1|1|0
    TC        :    x = 0.0093 : carrier concentration = 1.16 x 10¹⁹/cm3 : 15558|1|2|0
    TC        :    x = 0.0102 : carrier concentration = 2.15 x 10¹⁹/cm3 : 15558|1|3|0
    RHO       :    x = 0.0055 : carrier concentration = 1.9 x 10¹⁸/cm3 : 15558|2|0|0
    RHO       :    x = 0.008 : carrier concentration = 1.03 x 10¹⁹/cm3 : 15558|2|1|0
    RHO       :    x = 0.0093 : carrier concentration = 1.16 x 10¹⁹/cm3 : 15558|2|2|0
    RHO       :    x = 0.0102 : carrier concentration = 2.15 x 10¹⁹/cm3 : 15558|2|3|0
    SIGMA    :    x = 0.0055 : carrier concentration = 1.9 x 10¹⁸/cm3 : 15558|10|0|0
    SIGMA    :    x = 0.008 : carrier concentration = 1.03 x 10¹⁹/cm3 : 15558|10|1|0
    SIGMA    :    x = 0.0093 : carrier concentration = 1.16 x 10¹⁹/cm3 : 15558|10|2|0
    SIGMA    :    x = 0.0102 : carrier concentration = 2.15 x 10¹⁹/cm3 : 15558|10|3|0
    S         :    x = 0.0055 : carrier concentration = 1.9 x 10¹⁸/cm3 : 15558|48|0|0
    S         :    x = 0.008 : carrier concentration = 1.03 x 10¹⁹/cm3 : 15558|48|1|0
    S         :    x = 0.0093 : carrier concentration = 1.16 x 10¹⁹/cm3 : 15558|48|2|0
    S         :    x = 0.0102 : carrier concentration = 2.15 x 10¹⁹/cm3 : 15558|48|3|0

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Ba₃.₄₅Nd₉.₇Ti₁₈O₅₄ (New)

    RHO       :    95% dense : 15548|2|0|-1
    SIGMA    :    95% dense : 15548|10|0|-1
    S         :    95% dense : 15548|48|0|-1

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Ba₅.₁₉Nd₈.₅₄Ti₁₈O₅₄ (New)

    TC        :    95% dense : 15482|1|0|-1
    RHO       :    95% dense : 15482|2|0|-1
    SIGMA    :    95% dense : 15482|10|0|-1
    S         :    95% dense : 15482|48|0|-1

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Ba₆Nd₈Ti₁₈O₅₄ (New)

    RHO       :    95% dense : 15547|2|0|-1
    SIGMA    :    95% dense : 15547|10|0|-1
    S         :    95% dense : 15547|48|0|-1

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Ba₈Al₁₅Si₃₁ (New)

    RHO       :    solid : 95.8% dense, carrier concentration = 1 x 10²¹/cm3 : 15545|2|0|0
    E     (*):    solid : 95.8% dense : 15545|3|0|0
    SIGMA    :    solid : 95.8% dense, carrier concentration = 1 x 10²¹/cm3 : 15545|10|0|0
    G     (*):    solid : 95.8% dense : 15545|11|0|0
    v     (*):    solid : 95.8% dense : 15545|19|0|0
    D     (*):    solid : 15545|24|0|-1
    K     (*):    solid : 95.8% dense : 15545|27|0|0
    S         :    solid : 95.8% dense, carrier concentration = 1 x 10²¹/cm3 : 15545|48|0|0

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Ba₈Cu₄.₈Si₄₁.₂ (New)

    RHO       :    hot-pressed : at 680 °C (1256 °F), 77% dense : 15546|2|0|0
    RHO       :    hot-pressed : at 720 °C (1328 °F), 83% dense : 15546|2|0|1
    RHO       :    hot-pressed : at 760 °C (1400 °F), 92% dense : 15546|2|0|2
    RHO       :    hot-pressed : at 800 °C (1472 °F), 99% dense : 15546|2|0|3
    RHO       :    spark plasma sintered : at 680 °C (1256 °F), 78% dense : 15546|2|1|0
    RHO       :    spark plasma sintered : at 720 °C (1328 °F), 80% dense : 15546|2|1|1
    RHO       :    spark plasma sintered : at 760 °C (1400 °F), 85% dense : 15546|2|1|2
    RHO       :    spark plasma sintered : at 820 °C (1508 °F), 89% dense : 15546|2|1|3
    SIGMA    :    hot-pressed : at 680 °C (1256 °F), 77% dense : 15546|10|0|0
    SIGMA    :    hot-pressed : at 720 °C (1328 °F), 83% dense : 15546|10|0|1
    SIGMA    :    hot-pressed : at 760 °C (1400 °F), 92% dense : 15546|10|0|2
    SIGMA    :    hot-pressed : at 800 °C (1472 °F), 99% dense : 15546|10|0|3
    SIGMA    :    spark plasma sintered : at 680 °C (1256 °F), 78% dense : 15546|10|1|0
    SIGMA    :    spark plasma sintered : at 720 °C (1328 °F), 80% dense : 15546|10|1|1
    SIGMA    :    spark plasma sintered : at 760 °C (1400 °F), 85% dense : 15546|10|1|2
    SIGMA    :    spark plasma sintered : at 820 °C (1508 °F), 89% dense : 15546|10|1|3
    S         :    hot-pressed : at 680 °C (1256 °F), 77% dense : 15546|48|0|0
    S         :    hot-pressed : at 720 °C (1328 °F), 83% dense : 15546|48|0|1
    S         :    hot-pressed : at 760 °C (1400 °F), 92% dense : 15546|48|0|2
    S         :    hot-pressed : at 800 °C (1472 °F), 99% dense : 15546|48|0|3
    S         :    spark plasma sintered : at 680 °C (1256 °F), 78% dense : 15546|48|1|0
    S         :    spark plasma sintered : at 720 °C (1328 °F), 80% dense : 15546|48|1|1
    S         :    spark plasma sintered : at 760 °C (1400 °F), 85% dense : 15546|48|1|2
    S         :    spark plasma sintered : at 820 °C (1508 °F), 89% dense : 15546|48|1|3

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Bi₀.₄₂Sb₁.₅₅Te₃ (Ga and Ag dopants) (New)

    TC        :    undoped, carrier concentration = 3.86 x 10¹⁹/cm3, mobility = 156 cm2/(V-s) : 15456|1|0|-1
    TC        :    doped : 0.0005 Ag, carrier concentration = 3.97 x 10¹⁹/cm3, mobility = 165 cm2/(V-s) : 15456|1|1|0
    TC        :    doped : 0.0015 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|1|1|1
    TC        :    doped : 0.003 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|1|1|2
    TC        :    doped : 0.025 Ga, carrier concentration = 3.34 x 10¹⁹/cm3, mobility = 151 cm2/(V-s) : 15456|1|1|3
    TC        :    doped : 0.05 Ga, carrier concentration = 2.75 x 10¹⁹/cm3, mobility = 153 cm2/(V-s) : 15456|1|1|4
    TC        :    doped : 0.025 Ga + 0.0015 Ag, carrier concentration = 3.71 x 10¹⁹/cm3, mobility = 166 cm2/(V-s) : 15456|1|1|5
    TC        :    doped : 0.05 Ga + 0.0015 Ag, carrier concentration = 3.53 x 10¹⁹/cm3, mobility = 148 cm2/(V-s) : 15456|1|1|6
    TC        :    doped : 0.025 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|1|1|7
    TC        :    doped : 0.05 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|1|1|8
    RHO       :    undoped, carrier concentration = 3.86 x 10¹⁹/cm3, mobility = 156 cm2/(V-s) : 15456|2|0|-1
    RHO       :    doped : 0.0005 Ag, carrier concentration = 3.97 x 10¹⁹/cm3, mobility = 165 cm2/(V-s) : 15456|2|1|0
    RHO       :    doped : 0.0015 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|2|1|1
    RHO       :    doped : 0.003 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|2|1|2
    RHO       :    doped : 0.025 Ga, carrier concentration = 3.34 x 10¹⁹/cm3, mobility = 151 cm2/(V-s) : 15456|2|1|3
    RHO       :    doped : 0.05 Ga, carrier concentration = 2.75 x 10¹⁹/cm3, mobility = 153 cm2/(V-s) : 15456|2|1|4
    RHO       :    doped : 0.025 Ga + 0.0015 Ag, carrier concentration = 3.71 x 10¹⁹/cm3, mobility = 166 cm2/(V-s) : 15456|2|1|5
    RHO       :    doped : 0.05 Ga + 0.0015 Ag, carrier concentration = 3.53 x 10¹⁹/cm3, mobility = 148 cm2/(V-s) : 15456|2|1|6
    RHO       :    doped : 0.025 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|2|1|7
    RHO       :    doped : 0.05 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|2|1|8
    SIGMA    :    undoped, carrier concentration = 3.86 x 10¹⁹/cm3, mobility = 156 cm2/(V-s) : 15456|10|0|-1
    SIGMA    :    doped : 0.0005 Ag, carrier concentration = 3.97 x 10¹⁹/cm3, mobility = 165 cm2/(V-s) : 15456|10|1|0
    SIGMA    :    doped : 0.0015 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|10|1|1
    SIGMA    :    doped : 0.003 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|10|1|2
    SIGMA    :    doped : 0.025 Ga, carrier concentration = 3.34 x 10¹⁹/cm3, mobility = 151 cm2/(V-s) : 15456|10|1|3
    SIGMA    :    doped : 0.05 Ga, carrier concentration = 2.75 x 10¹⁹/cm3, mobility = 153 cm2/(V-s) : 15456|10|1|4
    SIGMA    :    doped : 0.025 Ga + 0.0015 Ag, carrier concentration = 3.71 x 10¹⁹/cm3, mobility = 166 cm2/(V-s) : 15456|10|1|5
    SIGMA    :    doped : 0.05 Ga + 0.0015 Ag, carrier concentration = 3.53 x 10¹⁹/cm3, mobility = 148 cm2/(V-s) : 15456|10|1|6
    SIGMA    :    doped : 0.025 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|10|1|7
    SIGMA    :    doped : 0.05 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|10|1|8
    S         :    undoped, carrier concentration = 3.86 x 10¹⁹/cm3, mobility = 156 cm2/(V-s) : 15456|48|0|-1
    S         :    doped : 0.0005 Ag, carrier concentration = 3.97 x 10¹⁹/cm3, mobility = 165 cm2/(V-s) : 15456|48|1|0
    S         :    doped : 0.0015 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|48|1|1
    S         :    doped : 0.003 Ag, carrier concentration = 4.11 x 10¹⁹/cm3, mobility = 201 cm2/(V-s) : 15456|48|1|2
    S         :    doped : 0.025 Ga, carrier concentration = 3.34 x 10¹⁹/cm3, mobility = 151 cm2/(V-s) : 15456|48|1|3
    S         :    doped : 0.05 Ga, carrier concentration = 2.75 x 10¹⁹/cm3, mobility = 153 cm2/(V-s) : 15456|48|1|4
    S         :    doped : 0.025 Ga + 0.0015 Ag, carrier concentration = 3.71 x 10¹⁹/cm3, mobility = 166 cm2/(V-s) : 15456|48|1|5
    S         :    doped : 0.05 Ga + 0.0015 Ag, carrier concentration = 3.53 x 10¹⁹/cm3, mobility = 148 cm2/(V-s) : 15456|48|1|6
    S         :    doped : 0.025 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|48|1|7
    S         :    doped : 0.05 Ga + 0.003 Ag, carrier concentration = 4.21 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15456|48|1|8

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Bi₀.₄₇₅Sb₁.₄₂₅Sn₀.₁Te₃ (New)

    TC        :    solid : density > 95% : 15537|1|0|0
    RHO       :    solid : density > 95% : 15537|2|0|0
    SIGMA    :    solid : density > 95% : 15537|10|0|0
    S         :    solid : density > 95% : 15537|48|0|0

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Bi₀.₄Sb₁.₆Te₃ (Sn and ZnO doped) (New)

    TC        :    undoped : plasma activated sintered, carrier concentration = 2.59 x 10¹⁹/cm3, mobility = 218 cm2/(V-s) : 15459|1|0|0
    TC        :    ZnO doped : 0.1 wt% ZnO, plasma activated sintered, carrier concentration = 2.47 x 10¹⁹/cm3, mobility = 204 cm2/(V-s) : 15459|1|1|0
    TC        :    ZnO doped : 0.3 wt% ZnO, plasma activated sintered, carrier concentration = 2.51 x 10¹⁹/cm3, mobility = 183 cm2/(V-s) : 15459|1|1|1
    TC        :    ZnO doped : 0.5 wt% ZnO, plasma activated sintered, carrier concentration = 2.64 x 10¹⁹/cm3, mobility = 147 cm2/(V-s) : 15459|1|1|2
    RHO       :    undoped : 400 nm MOCVD thin film, carrier concentration = 6 x 10¹⁸/cm3, mobility = 166 cm2/(V-s) : 15459|2|0|0
    RHO       :    undoped : spark plasma sintered at 300 °C (572 °F), mobility = 155 cm2/(V-s) : 15459|2|0|1
    RHO       :    undoped : spark plasma sintered at 350 °C (662 °F), mobility = 1128 cm2/(V-s) : 15459|2|0|2
    RHO       :    undoped : spark plasma sintered at 400 °C (752 °F), mobility = 224 cm2/(V-s) : 15459|2|0|3
    RHO       :    undoped : spark plasma sintered at 450 °C (842 °F), mobility = 162 cm2/(V-s) : 15459|2|0|4
    RHO       :    undoped : spark plasma sintered at 550 °C (1022 °F), mobility = 195 cm2/(V-s) : 15459|2|0|5
    RHO       :    undoped : plasma activated sintered, carrier concentration = 2.59 x 10¹⁹/cm3, mobility = 218 cm2/(V-s) : 15459|2|0|6
    RHO       :    Sn doped : 400 nm MOCVD thin film, carrier concentration = 8 x 10¹⁸/cm3, mobility = 148 cm2/(V-s) : 15459|2|1|0
    RHO       :    Sn doped : 400 nm MOCVD thin film, carrier concentration = 1.5 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15459|2|1|1
    RHO       :    Sn doped : 400 nm MOCVD thin film, carrier concentration = 1.2 x 10²⁰/cm3, mobility = 156 cm2/(V-s) : 15459|2|1|2
    RHO       :    ZnO doped : 0.1 wt% ZnO, plasma activated sintered, carrier concentration = 2.47 x 10¹⁹/cm3, mobility = 204 cm2/(V-s) : 15459|2|2|0
    RHO       :    ZnO doped : 0.3 wt% ZnO, plasma activated sintered, carrier concentration = 2.51 x 10¹⁹/cm3, mobility = 183 cm2/(V-s) : 15459|2|2|1
    RHO       :    ZnO doped : 0.5 wt% ZnO, plasma activated sintered, carrier concentration = 2.64 x 10¹⁹/cm3, mobility = 147 cm2/(V-s) : 15459|2|2|2
    SIGMA    :    undoped : 400 nm MOCVD thin film, carrier concentration = 6 x 10¹⁸/cm3, mobility = 166 cm2/(V-s) : 15459|10|0|0
    SIGMA    :    undoped : spark plasma sintered at 300 °C (572 °F), mobility = 155 cm2/(V-s) : 15459|10|0|1
    SIGMA    :    undoped : spark plasma sintered at 350 °C (662 °F), mobility = 1128 cm2/(V-s) : 15459|10|0|2
    SIGMA    :    undoped : spark plasma sintered at 400 °C (752 °F), mobility = 224 cm2/(V-s) : 15459|10|0|3
    SIGMA    :    undoped : spark plasma sintered at 450 °C (842 °F), mobility = 162 cm2/(V-s) : 15459|10|0|4
    SIGMA    :    undoped : spark plasma sintered at 550 °C (1022 °F), mobility = 195 cm2/(V-s) : 15459|10|0|5
    SIGMA    :    undoped : plasma activated sintered, carrier concentration = 2.59 x 10¹⁹/cm3, mobility = 218 cm2/(V-s) : 15459|10|0|6
    SIGMA    :    Sn doped : 400 nm MOCVD thin film, carrier concentration = 8 x 10¹⁸/cm3, mobility = 148 cm2/(V-s) : 15459|10|1|0
    SIGMA    :    Sn doped : 400 nm MOCVD thin film, carrier concentration = 1.5 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15459|10|1|1
    SIGMA    :    Sn doped : 400 nm MOCVD thin film, carrier concentration = 1.2 x 10²⁰/cm3, mobility = 156 cm2/(V-s) : 15459|10|1|2
    SIGMA    :    ZnO doped : 0.1 wt% ZnO, plasma activated sintered, carrier concentration = 2.47 x 10¹⁹/cm3, mobility = 204 cm2/(V-s) : 15459|10|2|0
    SIGMA    :    ZnO doped : 0.3 wt% ZnO, plasma activated sintered, carrier concentration = 2.51 x 10¹⁹/cm3, mobility = 183 cm2/(V-s) : 15459|10|2|1
    SIGMA    :    ZnO doped : 0.5 wt% ZnO, plasma activated sintered, carrier concentration = 2.64 x 10¹⁹/cm3, mobility = 147 cm2/(V-s) : 15459|10|2|2
    S     (*):    undoped : 400 nm MOCVD thin film, carrier concentration = 6 x 10¹⁸/cm3, mobility = 166 cm2/(V-s) : 15459|48|0|0
    S         :    undoped : plasma activated sintered, carrier concentration = 2.59 x 10¹⁹/cm3, mobility = 218 cm2/(V-s) : 15459|48|0|1
    S     (*):    Sn doped : 400 nm MOCVD thin film, carrier concentration = 8 x 10¹⁸/cm3, mobility = 148 cm2/(V-s) : 15459|48|1|0
    S     (*):    Sn doped : 400 nm MOCVD thin film, carrier concentration = 1.5 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15459|48|1|1
    S     (*):    Sn doped : 400 nm MOCVD thin film, carrier concentration = 1.2 x 10²⁰/cm3, mobility = 156 cm2/(V-s) : 15459|48|1|2
    S         :    ZnO doped : 0.1 wt% ZnO, plasma activated sintered, carrier concentration = 2.47 x 10¹⁹/cm3, mobility = 204 cm2/(V-s) : 15459|48|2|0
    S         :    ZnO doped : 0.3 wt% ZnO, plasma activated sintered, carrier concentration = 2.51 x 10¹⁹/cm3, mobility = 183 cm2/(V-s) : 15459|48|2|1
    S         :    ZnO doped : 0.5 wt% ZnO, plasma activated sintered, carrier concentration = 2.64 x 10¹⁹/cm3, mobility = 147 cm2/(V-s) : 15459|48|2|2

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Bi₀.₅Sb₁.₅Te₃ (Sn and Te doped)

    TC     (N):    undoped : Cai et. al. : 3283|1|0|1
    TC     (N):    undoped : average of Wang et. al. and Cai et. al. : 3283|1|0|2
    TC     (N):    Sn doped : 0.1 at% Sn : 3283|1|1|0
    TC     (N):    Sn doped : 0.2 at% Sn : 3283|1|1|1
    TC     (N):    Sn doped : 1 at% Sn : 3283|1|1|2
    RHO    (N):    undoped : Kitagawa et. al., carrier concentration = 8.9 x 10¹⁹/cm3 : 3283|2|0|1
    RHO    (N):    undoped : Cai et. al. : 3283|2|0|2
    RHO    (N):    Te doped : 4 wt% Te, carrier concentration = 4.6 x 10¹⁹/cm3 : 3283|2|1|0
    RHO    (N):    Te doped : 6 wt% Te, carrier concentration = 3.2 x 10¹⁹/cm3 : 3283|2|1|1
    RHO    (N):    Te doped : 10 wt% Te, carrier concentration = 3.3 x 10¹⁹/cm3 : 3283|2|1|2
    RHO    (N):    Sn doped : 0.1 at% Sn : 3283|2|2|0
    RHO    (N):    Sn doped : 0.2 at% Sn : 3283|2|2|1
    RHO    (N):    Sn doped : 1 at% Sn : 3283|2|2|2
    SH     (N):    Sn doped : 0.2 at% Sn : 3283|9|1|0
    SIGMA (N):    undoped : Kitagawa et. al., carrier concentration = 8.9 x 10¹⁹/cm3 : 3283|10|0|1
    SIGMA (N):    undoped : Cai et. al. : 3283|10|0|2
    SIGMA (N):    Te doped : 4 wt% Te, carrier concentration = 4.6 x 10¹⁹/cm3 : 3283|10|1|0
    SIGMA (N):    Te doped : 6 wt% Te, carrier concentration = 3.2 x 10¹⁹/cm3 : 3283|10|1|1
    SIGMA (N):    Te doped : 10 wt% Te, carrier concentration = 3.3 x 10¹⁹/cm3 : 3283|10|1|2
    SIGMA (N):    Sn doped : 0.1 at% Sn : 3283|10|2|0
    SIGMA (N):    Sn doped : 0.2 at% Sn : 3283|10|2|1
    SIGMA (N):    Sn doped : 1 at% Sn : 3283|10|2|2
    TD     (N):    Sn doped : 0.2 at% Sn : 3283|25|1|0
    S      (N):    undoped : Kitagawa et. al., carrier concentration = 8.9 x 10¹⁹/cm3 : 3283|48|0|1
    S      (N):    undoped : Cai et. al. : 3283|48|0|2
    S      (N):    Te doped : 4 wt% Te, carrier concentration = 4.6 x 10¹⁹/cm3 : 3283|48|1|0
    S      (N):    Te doped : 6 wt% Te, carrier concentration = 3.2 x 10¹⁹/cm3 : 3283|48|1|1
    S      (N):    Te doped : 10 wt% Te, carrier concentration = 3.3 x 10¹⁹/cm3 : 3283|48|1|2
    S      (N):    Sn doped : 0.1 at% Sn : 3283|48|2|0
    S      (N):    Sn doped : 0.2 at% Sn : 3283|48|2|1
    S      (N):    Sn doped : 1 at% Sn : 3283|48|2|2

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Bi₁.₇Fe₀.₃Te₃ (New)

    TC        :    single crystal : (111) single crystal, carrier concentration = 3.1 x 10¹⁹/cm3, mobility = 235 cm2/(V-s) : 15455|1|0|0
    S         :    single crystal : (111) single crystal, carrier concentration = 3.1 x 10¹⁹/cm3, mobility = 235 cm2/(V-s) : 15455|48|0|0

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Bi₁.₈Fe₀.₂Te₃ (New)

    TC        :    single crystal : (111) single crystal, carrier concentration = 2.8 x 10¹⁹/cm3, mobility = 230 cm2/(V-s) : 15454|1|0|0
    S         :    single crystal : (111) single crystal, carrier concentration = 2.8 x 10¹⁹/cm3, mobility = 230 cm2/(V-s) : 15454|48|0|0

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Bi₁.₉Fe₀.₁Te₃ (New)

    TC        :    single crystal : (111) single crystal, carrier concentration = 1.5 x 10¹⁹/cm3, mobility = 226 cm2/(V-s) : 15453|1|0|0
    S         :    single crystal : (111) single crystal, carrier concentration = 1.5 x 10¹⁹/cm3, mobility = 226 cm2/(V-s) : 15453|48|0|0

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Bi₂Te₂.₇Se₀.₃ (dopants)

    TC     (N):    undoped : polycrystal, Cao et. al. : 14642|1|0|0
    TC     (N):    undoped : polycrystal, Kim et. al., carrier concentration = 4.49 x 10¹⁹/cm3, mobility = 156 cm2/(V-s) : 14642|1|0|1
    TC     (N):    undoped : polycrystal, Lee et. al., carrier concentration = 6.27 x 10¹⁹/cm3, mobility = 82.3 cm2/(V-s) : 14642|1|0|2
    TC     (N):    undoped : polycrystal, Zhang et. al., carrier concentration = 5.3 x 10¹⁹/cm3 : 14642|1|0|3
    TC     (N):    undoped : polycrystal, average : 14642|1|0|4
    TC     (N):    undoped : (111) single crystal : 14642|1|0|5
    TC     (N):    iodine doped : 0.0075 iodine, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 105 cm2/(V-s), extrapolated from 50 °C (122 °F) to 20 °C (68 °F) : 14642|1|3|0
    TC     (N):    iodine doped : 0.01 iodine, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|1|3|1
    TC     (N):    copper doped : 0.01 copper, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|1|4|0
    TC     (N):    copper doped : 0.02 copper, carrier concentration = 5.56 x 10¹⁹/cm3, mobility = 71.8 cm2/(V-s) : 14642|1|4|1
    TC     (N):    silver doped : 0.005 silver, carrier concentration = 5.82 x 10¹⁹/cm3, mobility = 50.1 cm2/(V-s) : 14642|1|5|0
    TC     (N):    silver doped : 0.01 silver, carrier concentration = 4.28 x 10¹⁹/cm3, mobility = 55.4 cm2/(V-s) : 14642|1|5|1
    TC     (N):    boron doped : 0.02 B, carrier concentration = 4.6 x 10¹⁹/cm3 : 14642|1|6|0
    TC     (N):    boron doped : 0.04 B, carrier concentration = 3.3 x 10¹⁹/cm3 : 14642|1|6|1
    TC     (N):    boron doped : 0.06 B, carrier concentration = 3.8 x 10¹⁹/cm3 : 14642|1|6|2
    TC     (N):    boron doped : 0.08 B, carrier concentration = 2.4 x 10¹⁹/cm3 : 14642|1|6|3
    TC     (N):    boron doped : 0.1 B, carrier concentration = 2 x 10¹⁹/cm3 : 14642|1|6|4
    RHO    (N):    undoped : polycrystal, Cao et. al. : 14642|2|0|0
    RHO    (N):    undoped : polycrystal, Kim et. al. : 14642|2|0|1
    RHO    (N):    undoped : polycrystal, Lee et. al. : 14642|2|0|2
    RHO    (N):    undoped : polycrystal, Zhang et. al., carrier concentration = 5.3 x 10¹⁹/cm3 : 14642|2|0|3
    RHO    (N):    undoped : polycrystal, average : 14642|2|0|4
    RHO    (N):    iodine doped : 0.0075 iodine, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 105 cm2/(V-s) : 14642|2|3|0
    RHO    (N):    iodine doped : 0.01 iodine, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|2|3|1
    RHO    (N):    copper doped : 0.01 copper, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|2|4|0
    RHO    (N):    copper doped : 0.02 copper, carrier concentration = 5.56 x 10¹⁹/cm3, mobility = 71.8 cm2/(V-s) : 14642|2|4|1
    RHO    (N):    silver doped : 0.005 silver, carrier concentration = 5.82 x 10¹⁹/cm3, mobility = 50.1 cm2/(V-s) : 14642|2|5|0
    RHO    (N):    silver doped : 0.01 silver, carrier concentration = 4.28 x 10¹⁹/cm3, mobility = 55.4 cm2/(V-s) : 14642|2|5|1
    RHO    (N):    boron doped : 0.02 B, carrier concentration = 4.6 x 10¹⁹/cm3 : 14642|2|6|0
    RHO    (N):    boron doped : 0.04 B, carrier concentration = 3.3 x 10¹⁹/cm3 : 14642|2|6|1
    RHO    (N):    boron doped : 0.06 B, carrier concentration = 3.8 x 10¹⁹/cm3 : 14642|2|6|2
    RHO    (N):    boron doped : 0.08 B, carrier concentration = 2.4 x 10¹⁹/cm3 : 14642|2|6|3
    RHO    (N):    boron doped : 0.1 B, carrier concentration = 2 x 10¹⁹/cm3 : 14642|2|6|4
    SIGMA (N):    undoped : polycrystal, Cao et. al. : 14642|10|0|0
    SIGMA (N):    undoped : polycrystal, Kim et. al. : 14642|10|0|1
    SIGMA (N):    undoped : polycrystal, Lee et. al. : 14642|10|0|2
    SIGMA (N):    undoped : polycrystal, Zhang et. al., carrier concentration = 5.3 x 10¹⁹/cm3 : 14642|10|0|3
    SIGMA (N):    undoped : polycrystal, average : 14642|10|0|4
    SIGMA (N):    iodine doped : 0.0075 iodine, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 105 cm2/(V-s) : 14642|10|3|0
    SIGMA (N):    iodine doped : 0.01 iodine, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|10|3|1
    SIGMA (N):    copper doped : 0.01 copper, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|10|4|0
    SIGMA (N):    copper doped : 0.02 copper, carrier concentration = 5.56 x 10¹⁹/cm3, mobility = 71.8 cm2/(V-s) : 14642|10|4|1
    SIGMA (N):    silver doped : 0.005 silver, carrier concentration = 5.82 x 10¹⁹/cm3, mobility = 50.1 cm2/(V-s) : 14642|10|5|0
    SIGMA (N):    silver doped : 0.01 silver, carrier concentration = 4.28 x 10¹⁹/cm3, mobility = 55.4 cm2/(V-s) : 14642|10|5|1
    SIGMA (N):    boron doped : 0.02 B, carrier concentration = 4.6 x 10¹⁹/cm3 : 14642|10|6|0
    SIGMA (N):    boron doped : 0.04 B, carrier concentration = 3.3 x 10¹⁹/cm3 : 14642|10|6|1
    SIGMA (N):    boron doped : 0.06 B, carrier concentration = 3.8 x 10¹⁹/cm3 : 14642|10|6|2
    SIGMA (N):    boron doped : 0.08 B, carrier concentration = 2.4 x 10¹⁹/cm3 : 14642|10|6|3
    SIGMA (N):    boron doped : 0.1 B, carrier concentration = 2 x 10¹⁹/cm3 : 14642|10|6|4
    S      (N):    undoped : polycrystal, Cao et. al. : 14642|48|0|0
    S      (N):    undoped : polycrystal, carrier concentration = 4.49 x 10¹⁹/cm3, mobility = 156 cm2/(V-s), Kim et. al. : 14642|48|0|1
    S      (N):    undoped : polycrystal, carrier concentration = 6.27 x 10¹⁹/cm3, mobility = 82.3 cm2/(V-s), Lee et. al. : 14642|48|0|2
    S      (N):    undoped : polycrystal, Zhang et. al., carrier concentration = 5.3 x 10¹⁹/cm3 : 14642|48|0|3
    S      (N):    undoped : polycrystal, average : 14642|48|0|4
    S      (N):    undoped : (111) single crystal, carrier concentration = 2.6 x 10¹⁹/cm3, mobility = 209 cm2/(V-s) : 14642|48|0|5
    S      (N):    iodine doped : 0.0075 iodine, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 105 cm2/(V-s) : 14642|48|3|0
    S      (N):    iodine doped : 0.01 iodine, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|48|3|1
    S      (N):    copper doped : 0.01 copper, carrier concentration = 1.35 x 10²⁰/cm3, mobility = 88 cm2/(V-s) : 14642|48|4|0
    S      (N):    copper doped : 0.02 copper, carrier concentration = 5.56 x 10¹⁹/cm3, mobility = 71.8 cm2/(V-s) : 14642|48|4|1
    S      (N):    silver doped : 0.005 silver, carrier concentration = 5.82 x 10¹⁹/cm3, mobility = 50.1 cm2/(V-s) : 14642|48|5|0
    S      (N):    silver doped : 0.01 silver, carrier concentration = 4.28 x 10¹⁹/cm3, mobility = 55.4 cm2/(V-s) : 14642|48|5|1
    S      (N):    boron doped : 0.02 B, carrier concentration = 4.6 x 10¹⁹/cm3 : 14642|48|6|0
    S      (N):    boron doped : 0.04 B, carrier concentration = 3.3 x 10¹⁹/cm3 : 14642|48|6|1
    S      (N):    boron doped : 0.06 B, carrier concentration = 3.8 x 10¹⁹/cm3 : 14642|48|6|2
    S      (N):    boron doped : 0.08 B, carrier concentration = 2.4 x 10¹⁹/cm3 : 14642|48|6|3
    S      (N):    boron doped : 0.1 B, carrier concentration = 2 x 10¹⁹/cm3 : 14642|48|6|4

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Bi₂Te₂.₈₅Se₀.₁₅ (Cu doped) (New)

    RHO       :    Cu doped : 0.01 Cu, carrier concentration = 1.3 x 10¹⁹/cm3 : 15428|2|0|0
    RHO       :    Cu doped : 0.02 Cu, carrier concentration = 8 x 10¹⁹/cm3 : 15428|2|0|1
    SIGMA    :    Cu doped : 0.01 Cu, carrier concentration = 1.3 x 10¹⁹/cm3 : 15428|10|0|0
    SIGMA    :    Cu doped : 0.02 Cu, carrier concentration = 8 x 10¹⁹/cm3 : 15428|10|0|1
    S     (*):    Cu doped : 0.01 Cu, carrier concentration = 1.3 x 10¹⁹/cm3 : 15428|48|0|0
    S     (*):    Cu doped : 0.02 Cu, carrier concentration = 8 x 10¹⁹/cm3 : 15428|48|0|1

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Bi₂Te₂.₈Se₀.₂ (New)

    TC        :    single crystal : (111) single crystal, carrier concentration = 2.2 x 10¹⁹/cm3, mobility = 212 cm2/(V-s) : 15452|1|0|0
    S         :    single crystal : (111) single crystal, carrier concentration = 2.2 x 10¹⁹/cm3, mobility = 212 cm2/(V-s) : 15452|48|0|0

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Bi₂Te₂.₉₃Se₀.₀₇ (New)

    RHO       :    nano crystal : < 50 nm nano crystal : 15462|2|0|0
    RHO       :    nano crystal : < 100 nm nano crystal : 15462|2|0|1
    SIGMA    :    nano crystal : < 50 nm nano crystal : 15462|10|0|0
    SIGMA    :    nano crystal : < 100 nm nano crystal : 15462|10|0|1
    S         :    nano crystal : < 50 nm nano crystal : 15462|48|0|0
    S         :    nano crystal : < 100 nm nano crystal : 15462|48|0|1

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Bi₂Te₂.₉₅Se₀.₀₅ (New)

    RHO       :    nano crystal : < 50 nm nano crystal : 15461|2|0|0
    RHO       :    nano crystal : < 100 nm nano crystal : 15461|2|0|1
    SIGMA    :    nano crystal : < 50 nm nano crystal : 15461|10|0|0
    SIGMA    :    nano crystal : < 100 nm nano crystal : 15461|10|0|1
    S         :    nano crystal : < 50 nm nano crystal : 15461|48|0|0
    S         :    nano crystal : < 100 nm nano crystal : 15461|48|0|1

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Bi₂Te₂.₉₇Se₀.₀₃ (New)

    RHO       :    nano crystal : < 50 nm nano crystal : 15460|2|0|0
    RHO       :    nano crystal : < 100 nm nano crystal : 15460|2|0|1
    SIGMA    :    nano crystal : < 50 nm nano crystal : 15460|10|0|0
    SIGMA    :    nano crystal : < 100 nm nano crystal : 15460|10|0|1
    S         :    nano crystal : < 50 nm nano crystal : 15460|48|0|0
    S         :    nano crystal : < 100 nm nano crystal : 15460|48|0|1

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Bi₂Te₂.₉Se₀.₁ (New)

    TC        :    single crystal : (111) single crystal, carrier concentration = 1.4 x 10¹⁹/cm3, mobility = 218 cm2/(V-s) : 15451|1|0|0
    TC        :    nano crystal : < 50 nm nano crystal : 15451|1|1|0
    TC        :    nano crystal : < 100 nm nano crystal : 15451|1|1|1
    RHO       :    nano crystal : < 50 nm nano crystal : 15451|2|0|0
    RHO       :    nano crystal : < 100 nm nano crystal : 15451|2|0|1
    SIGMA    :    nano crystal : < 50 nm nano crystal : 15451|10|0|0
    SIGMA    :    nano crystal : < 100 nm nano crystal : 15451|10|0|1
    S         :    single crystal : (111) single crystal, carrier concentration = 1.4 x 10¹⁹/cm3, mobility = 218 cm2/(V-s) : 15451|48|0|0
    S         :    nano crystal : < 50 nm nano crystal : 15451|48|1|0
    S         :    nano crystal : < 100 nm nano crystal : 15451|48|1|1

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Bi₂Te₃ (Pb doped) (New)

    RHO       :    undoped, single crystal : 15458|2|0|-1
    RHO       :    doped, single crystal : 3.4 x 10²⁴ Pb/m3 (0.039 at%) : 15458|2|1|0
    RHO       :    doped, single crystal : 9.6 x 10²⁴ Pb/m3 (0.11 at%) : 15458|2|1|1
    RHO       :    doped, single crystal : 3.79 x 10²⁵ Pb/m3 (0.435 at%) : 15458|2|1|2
    RHO       :    doped, single crystal : 5.87 x 10²⁵ Pb/m3 (0.67 at%) : 15458|2|1|3
    RHO       :    doped, single crystal : 8.13 x 10²⁵ Pb/m3 (0.93 at%) : 15458|2|1|4
    RHO       :    doped, single crystal : 9.41 x 10²⁵ Pb/m3 (1.08 at%) : 15458|2|1|5
    SIGMA    :    undoped, single crystal : 15458|10|0|-1
    SIGMA    :    doped, single crystal : 3.4 x 10²⁴ Pb/m3 (0.039 at%) : 15458|10|1|0
    SIGMA    :    doped, single crystal : 9.6 x 10²⁴ Pb/m3 (0.11 at%) : 15458|10|1|1
    SIGMA    :    doped, single crystal : 3.79 x 10²⁵ Pb/m3 (0.435 at%) : 15458|10|1|2
    SIGMA    :    doped, single crystal : 5.87 x 10²⁵ Pb/m3 (0.67 at%) : 15458|10|1|3
    SIGMA    :    doped, single crystal : 8.13 x 10²⁵ Pb/m3 (0.93 at%) : 15458|10|1|4
    SIGMA    :    doped, single crystal : 9.41 x 10²⁵ Pb/m3 (1.08 at%) : 15458|10|1|5
    S         :    undoped, single crystal : 15458|48|0|-1
    S         :    doped, single crystal : 3.4 x 10²⁴ Pb/m3 (0.039 at%) : 15458|48|1|0
    S         :    doped, single crystal : 9.6 x 10²⁴ Pb/m3 (0.11 at%) : 15458|48|1|1
    S         :    doped, single crystal : 3.79 x 10²⁵ Pb/m3 (0.435 at%) : 15458|48|1|2
    S         :    doped, single crystal : 5.87 x 10²⁵ Pb/m3 (0.67 at%) : 15458|48|1|3
    S         :    doped, single crystal : 8.13 x 10²⁵ Pb/m3 (0.93 at%) : 15458|48|1|4
    S         :    doped, single crystal : 9.41 x 10²⁵ Pb/m3 (1.08 at%) : 15458|48|1|5

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Bi₂Te₃ + Cu composites (New)

    TC        :    pure material, carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15506|1|0|-1
    TC        :    0.125 wt% Cu, carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 172 cm2/(V-s) : 15506|1|1|-1
    TC        :    0.25 wt% Cu, carrier concentration = 1.17 x 10¹⁹/cm3, mobility = 217 cm2/(V-s) : 15506|1|2|-1
    TC        :    1 wt% Cu, carrier concentration = 1.3 x 10¹⁹/cm3, mobility = 241 cm2/(V-s) : 15506|1|3|-1
    RHO       :    pure material, carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15506|2|0|-1
    RHO       :    0.125 wt% Cu, carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 172 cm2/(V-s) : 15506|2|1|-1
    RHO       :    0.25 wt% Cu, carrier concentration = 1.17 x 10¹⁹/cm3, mobility = 217 cm2/(V-s) : 15506|2|2|-1
    RHO       :    1 wt% Cu, carrier concentration = 1.3 x 10¹⁹/cm3, mobility = 241 cm2/(V-s) : 15506|2|3|-1
    SIGMA    :    pure material, carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15506|10|0|-1
    SIGMA    :    0.125 wt% Cu, carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 172 cm2/(V-s) : 15506|10|1|-1
    SIGMA    :    0.25 wt% Cu, carrier concentration = 1.17 x 10¹⁹/cm3, mobility = 217 cm2/(V-s) : 15506|10|2|-1
    SIGMA    :    1 wt% Cu, carrier concentration = 1.3 x 10¹⁹/cm3, mobility = 241 cm2/(V-s) : 15506|10|3|-1
    S         :    pure material, carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15506|48|0|-1
    S         :    0.125 wt% Cu, carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 172 cm2/(V-s) : 15506|48|1|-1
    S         :    0.25 wt% Cu, carrier concentration = 1.17 x 10¹⁹/cm3, mobility = 217 cm2/(V-s) : 15506|48|2|-1
    S         :    1 wt% Cu, carrier concentration = 1.3 x 10¹⁹/cm3, mobility = 241 cm2/(V-s) : 15506|48|3|-1

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Bi₂Te₃ + Mo₂C MXene (New)

    TC        :    un-alloyed : 15552|1|0|-1
    TC        :    Mo2C MXene : 1 v/o : 15552|1|1|0
    TC        :    Mo2C MXene : 2 v/o : 15552|1|1|1
    TC        :    Mo2C MXene : 5 v/o : 15552|1|1|2
    TC        :    Mo2C MXene : 10 v/o : 15552|1|1|3
    RHO       :    un-alloyed : 15552|2|0|-1
    RHO       :    Mo2C MXene : 1 v/o : 15552|2|1|0
    RHO       :    Mo2C MXene : 2 v/o : 15552|2|1|1
    RHO       :    Mo2C MXene : 5 v/o : 15552|2|1|2
    RHO       :    Mo2C MXene : 10 v/o : 15552|2|1|3
    SIGMA    :    un-alloyed : 15552|10|0|-1
    SIGMA    :    Mo2C MXene : 1 v/o : 15552|10|1|0
    SIGMA    :    Mo2C MXene : 2 v/o : 15552|10|1|1
    SIGMA    :    Mo2C MXene : 5 v/o : 15552|10|1|2
    SIGMA    :    Mo2C MXene : 10 v/o : 15552|10|1|3
    TD        :    un-alloyed : 15552|25|0|-1
    TD        :    Mo2C MXene : 1 v/o : 15552|25|1|0
    TD        :    Mo2C MXene : 2 v/o : 15552|25|1|1
    TD        :    Mo2C MXene : 5 v/o : 15552|25|1|2
    TD        :    Mo2C MXene : 10 v/o : 15552|25|1|3
    S         :    un-alloyed : 15552|48|0|-1
    S         :    Mo2C MXene : 1 v/o : 15552|48|1|0
    S         :    Mo2C MXene : 2 v/o : 15552|48|1|1
    S         :    Mo2C MXene : 5 v/o : 15552|48|1|2
    S         :    Mo2C MXene : 10 v/o : 15552|48|1|3

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Bi₂Te₃ + SiC (New)

    TC        :    0 wt% SiC : 15557|1|0|-1
    TC        :    0.1 wt% SiC : 15557|1|1|-1
    TC        :    0.5 wt% SiC : 15557|1|2|-1
    RHO       :    0 wt% SiC : 15557|2|0|-1
    RHO       :    0.1 wt% SiC : 15557|2|1|-1
    RHO       :    0.5 wt% SiC : 15557|2|2|-1
    SIGMA    :    0 wt% SiC : 15557|10|0|-1
    SIGMA    :    0.1 wt% SiC : 15557|10|1|-1
    SIGMA    :    0.5 wt% SiC : 15557|10|2|-1
    S         :    0 wt% SiC : 15557|48|0|-1
    S         :    0.1 wt% SiC : 15557|48|1|-1
    S         :    0.5 wt% SiC : 15557|48|2|-1

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Bi₂Te₃ + Te nanostrings

    TC     (N):    heterostructure nanostrings : 15481|1|0|-1
    S      (N):    heterostructure nanostrings : 15481|48|0|-1

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Bi₂Te₃

    TC     (N):    polycrystal : Sie et. al., carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 3284|1|0|5
    TC     (N):    polycrystal : Suriwong et. al. : 3284|1|0|6
    TC     (N):    polycrystal : Guo et. al. : 3284|1|0|7
    TC     (N):    polycrystal : Li et. al. : 3284|1|0|8
    TC     (N):    single crystal : (111) single crystal, carrier concentration = 9 x 10¹⁸/cm3, mobility = 224 cm2/(V-s) : 3284|1|1|0
    RHO    (N):    bulk material : Sie et. al., carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 3284|2|0|4
    RHO    (N):    bulk material : Suriwong et. al. : 3284|2|0|5
    RHO    (N):    bulk material : Guo et. al. : 3284|2|0|6
    RHO    (N):    bulk material : Li et. al. : 3284|2|0|7
    RHO    (N):    thin film : 800 nm thick, as-deposited : 3284|2|1|7
    RHO    (N):    thin film : 800 nm thick, annealed, carrier concentration = 1.8 x 10²¹/cm3, mobility = 8.77 cm2/(V-s) : 3284|2|1|8
    RHO    (N):    nano crystal : < 50 nm nano crystal : 3284|2|2|0
    RHO    (N):    nano crystal : < 100 nm nano crystal : 3284|2|2|1
    SIGMA (N):    bulk material : Sie et. al., carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 3284|10|0|4
    SIGMA (N):    bulk material : Suriwong et. al. : 3284|10|0|5
    SIGMA (N):    bulk material : Guo et. al. : 3284|10|0|6
    SIGMA (N):    bulk material : Li et. al. : 3284|10|0|7
    SIGMA (N):    thin film : 800 nm thick, as-deposited : 3284|10|1|7
    SIGMA (N):    thin film : 800 nm thick, annealed, carrier concentration = 1.8 x 10²¹/cm3, mobility = 8.77 cm2/(V-s) : 3284|10|1|8
    SIGMA (N):    nano crystal : < 50 nm nano crystal : 3284|10|2|0
    SIGMA (N):    nano crystal : < 100 nm nano crystal : 3284|10|2|1
    TD     (N):    solid : Guo et. al. : 3284|25|0|3
    S      (N):    bulk material : Sie et. al., carrier concentration = 7.98 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 3284|48|0|4
    S      (N):    bulk material : Suriwong et. al. : 3284|48|0|5
    S      (N):    bulk material : Guo et. al. : 3284|48|0|6
    S      (N):    bulk material : Li et. al. : 3284|48|0|7
    S      (N):    thin film : 800 nm thick, as-deposited : 3284|48|1|7
    S      (N):    thin film : 800 nm thick, annealed, carrier concentration = 1.8 x 10²¹/cm3, mobility = 8.77 cm2/(V-s) : 3284|48|1|8
    S      (N):    single crystal : (111) single crystal, carrier concentration = 9 x 10¹⁸/cm3, mobility = 224 cm2/(V-s) : 3284|48|2|0
    S      (N):    nano crystal : < 50 nm nano crystal : 3284|48|3|0
    S      (N):    nano crystal : < 100 nm nano crystal : 3284|48|3|1

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BiCuSeO (Zn doped)

    TC     (N):    undoped : Das et. al. (2018) : 14616|1|0|1
    TC     (N):    undoped : Ren et. al. : 14616|1|0|2
    TC     (N):    Zn doped : 0.025 Zn, Ren et. al. : 14616|1|1|1
    TC     (N):    Zn doped : 0.05 Zn, Ren et. al. : 14616|1|1|3
    TC     (N):    Zn doped : 0.075 Zn, Ren et. al. : 14616|1|1|5
    TC     (N):    Zn doped : 0.1 Zn, Ren et. al. : 14616|1|1|8
    TC     (N):    Zn doped : 0.125 Zn, Ren et. al. : 14616|1|1|9
    RHO    (N):    undoped : Das et. al. 2018 : 14616|2|0|1
    RHO    (N):    Zn doped : 0.025 Zn, Ren et. al. : 14616|2|1|1
    RHO    (N):    Zn doped : 0.05 Zn, Ren et. al. : 14616|2|1|3
    RHO    (N):    Zn doped : 0.075 Zn, Ren et. al. : 14616|2|1|5
    RHO    (N):    Zn doped : 0.1 Zn, Ren et. al. : 14616|2|1|8
    RHO    (N):    Zn doped : 0.125 Zn, Ren et. al. : 14616|2|1|9
    RHO    (R):    non-stoichiometric : Bi0.96CuSeO : 14616|2|2|0
    RHO    (R):    non-stoichiometric : Bi0.96CuSeO0.98 : 14616|2|2|1
    RHO    (R):    non-stoichiometric : Bi0.92CuSeO0.98 : 14616|2|2|2
    RHO    (R):    non-stoichiometric : Bi0.88CuSeO0.98 : 14616|2|2|3
    SIGMA (N):    undoped : Das et. al. 2018 : 14616|10|0|1
    SIGMA (N):    Zn doped : 0.025 Zn, Ren et. al. : 14616|10|1|1
    SIGMA (N):    Zn doped : 0.05 Zn, Ren et. al. : 14616|10|1|3
    SIGMA (N):    Zn doped : 0.075 Zn, Ren et. al. : 14616|10|1|5
    SIGMA (N):    Zn doped : 0.1 Zn, Ren et. al. : 14616|10|1|8
    SIGMA (N):    Zn doped : 0.125 Zn, Ren et. al. : 14616|10|1|9
    SIGMA (R):    non-stoichiometric : Bi0.96CuSeO : 14616|10|2|0
    SIGMA (R):    non-stoichiometric : Bi0.96CuSeO0.98 : 14616|10|2|1
    SIGMA (R):    non-stoichiometric : Bi0.92CuSeO0.98 : 14616|10|2|2
    SIGMA (R):    non-stoichiometric : Bi0.88CuSeO0.98 : 14616|10|2|3
    S      (N):    undoped : Das et. al. 2019 : 14616|48|0|0
    S      (N):    undoped : Das et. al. 2018 : 14616|48|0|1
    S      (N):    undoped : Ren et. al. : 14616|48|0|2
    S      (N):    Zn doped : 0.02 Zn, Das et. al. : 14616|48|1|0
    S      (N):    Zn doped : 0.025 Zn, Ren et. al. : 14616|48|1|1
    S      (N):    Zn doped : 0.04 Zn, Das et. al. : 14616|48|1|2
    S      (N):    Zn doped : 0.05 Zn, Ren et. al. : 14616|48|1|3
    S      (N):    Zn doped : 0.06 Zn, Das et. al. : 14616|48|1|4
    S      (N):    Zn doped : 0.075 Zn, Ren et. al. : 14616|48|1|5
    S      (N):    Zn doped : 0.08 Zn, Das et. al. : 14616|48|1|6
    S      (N):    Zn doped : 0.1 Zn, Das et. al. : 14616|48|1|7
    S      (N):    Zn doped : 0.1 Zn, Ren et. al. : 14616|48|1|8
    S      (N):    Zn doped : 0.125 Zn, Ren et. al. : 14616|48|1|9
    S      (N):    non-stoichiometric : Bi0.96CuSeO : 14616|48|2|0
    S      (N):    non-stoichiometric : Bi0.96CuSeO0.98 : 14616|48|2|1
    S      (N):    non-stoichiometric : Bi0.92CuSeO0.98 : 14616|48|2|2
    S      (N):    non-stoichiometric : Bi0.88CuSeO0.98 : 14616|48|2|3

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Bismuth

    TC     (N):    solid : perpendicular to the trigonal axis : 917|1|0|1
    TC     (N):    solid : parallel to the trigonal axis : 917|1|0|2
    RHO    (N):    solid : perpendicular to the trigonal axis : 917|2|0|1
    RHO    (N):    solid : parallel to the trigonal axis : 917|2|0|2
    SIGMA (N):    solid : perpendicular to the trigonal axis : 917|10|0|1
    SIGMA (N):    solid : parallel to the trigonal axis : 917|10|0|2
    S      (N):    single crystal : perpendicular to the trigonal axis : 917|48|0|0
    S      (N):    single crystal : parallel to the trigonal axis : 917|48|0|1

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Ca₀.₁Eu₀.₉Zn₂Sb₂ (New)

    TC        :    spark plasma sintered : carrier concentration = 3.88 x 10¹⁹/cm3, mobility = 140 cm2/(V-s) : 15195|1|0|0
    RHO       :    spark plasma sintered : carrier concentration = 3.88 x 10¹⁹/cm3, mobility = 140 cm2/(V-s) : 15195|2|0|0
    SIGMA    :    spark plasma sintered : carrier concentration = 3.88 x 10¹⁹/cm3, mobility = 140 cm2/(V-s) : 15195|10|0|0
    S         :    spark plasma sintered : carrier concentration = 3.88 x 10¹⁹/cm3, mobility = 140 cm2/(V-s) : 15195|48|0|0

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Ca₀.₃Eu₀.₇Zn₂Sb₂ (New)

    TC        :    spark plasma sintered : carrier concentration = 3.81 x 10¹⁹/cm3, mobility = 124 cm2/(V-s) : 15196|1|0|0
    RHO       :    spark plasma sintered : carrier concentration = 3.81 x 10¹⁹/cm3, mobility = 124 cm2/(V-s) : 15196|2|0|0
    SIGMA    :    spark plasma sintered : carrier concentration = 3.81 x 10¹⁹/cm3, mobility = 124 cm2/(V-s) : 15196|10|0|0
    S         :    spark plasma sintered : carrier concentration = 3.81 x 10¹⁹/cm3, mobility = 124 cm2/(V-s) : 15196|48|0|0

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Ca₀.₇Eu₀.₃Zn₂Sb₂ (New)

    TC        :    spark plasma sintered : carrier concentration = 3.59 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15448|1|0|0
    RHO       :    spark plasma sintered : carrier concentration = 3.59 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15448|2|0|0
    SIGMA    :    spark plasma sintered : carrier concentration = 3.59 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15448|10|0|0
    S         :    spark plasma sintered : carrier concentration = 3.59 x 10¹⁹/cm3, mobility = 121 cm2/(V-s) : 15448|48|0|0

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Ca₀.₉Eu₀.₁Zn₂Sb₂ (New)

    TC        :    spark plasma sintered : carrier concentration = 3.29 x 10¹⁹/cm3, mobility = 117 cm2/(V-s) : 15447|1|0|0
    RHO       :    spark plasma sintered : carrier concentration = 3.29 x 10¹⁹/cm3, mobility = 117 cm2/(V-s) : 15447|2|0|0
    SIGMA    :    spark plasma sintered : carrier concentration = 3.29 x 10¹⁹/cm3, mobility = 117 cm2/(V-s) : 15447|10|0|0
    S         :    spark plasma sintered : carrier concentration = 3.29 x 10¹⁹/cm3, mobility = 117 cm2/(V-s) : 15447|48|0|0

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CaZn₂Sb₂ (New)

    TC        :    spark plasma sintered : carrier concentration = 3.04 x 10¹⁹/cm3, mobility = 63.6 cm2/(V-s) : 15507|1|0|0
    RHO       :    spark plasma sintered : carrier concentration = 3.04 x 10¹⁹/cm3, mobility = 63.6 cm2/(V-s) : 15507|2|0|0
    SIGMA    :    spark plasma sintered : carrier concentration = 3.04 x 10¹⁹/cm3, mobility = 63.6 cm2/(V-s) : 15507|10|0|0
    S         :    spark plasma sintered : carrier concentration = 3.04 x 10¹⁹/cm3, mobility = 63.6 cm2/(V-s) : 15507|48|0|0

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CdO (Co doped) (New)

    RHO       :    undoped, nanostructured powder : carrier concentration = 3.2 x 10¹⁹/cm3, mobility = 130 cm2/(V-s) : 15553|2|0|0
    RHO       :    Co doped, nanostructured powder : 2%, carrier concentration = 4.3 x 10¹⁹/cm3, mobility = 142 cm2/(V-s) : 15553|2|1|0
    RHO       :    Co doped, nanostructured powder : 4%, carrier concentration = 9.4 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15553|2|1|1
    RHO       :    Co doped, nanostructured powder : 6%, carrier concentration = 1.1 x 10²⁰/cm3, mobility = 195 cm2/(V-s) : 15553|2|1|2
    RHO       :    Co doped, nanostructured powder : 8%, carrier concentration = 1.4 x 10²⁰/cm3, mobility = 215 cm2/(V-s) : 15553|2|1|3
    SIGMA    :    undoped, nanostructured powder : carrier concentration = 3.2 x 10¹⁹/cm3, mobility = 130 cm2/(V-s) : 15553|10|0|0
    SIGMA    :    Co doped, nanostructured powder : 2%, carrier concentration = 4.3 x 10¹⁹/cm3, mobility = 142 cm2/(V-s) : 15553|10|1|0
    SIGMA    :    Co doped, nanostructured powder : 4%, carrier concentration = 9.4 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15553|10|1|1
    SIGMA    :    Co doped, nanostructured powder : 6%, carrier concentration = 1.1 x 10²⁰/cm3, mobility = 195 cm2/(V-s) : 15553|10|1|2
    SIGMA    :    Co doped, nanostructured powder : 8%, carrier concentration = 1.4 x 10²⁰/cm3, mobility = 215 cm2/(V-s) : 15553|10|1|3
    S         :    undoped, nanostructured powder : carrier concentration = 3.2 x 10¹⁹/cm3, mobility = 130 cm2/(V-s) : 15553|48|0|0
    S         :    Co doped, nanostructured powder : 2%, carrier concentration = 4.3 x 10¹⁹/cm3, mobility = 142 cm2/(V-s) : 15553|48|1|0
    S         :    Co doped, nanostructured powder : 4%, carrier concentration = 9.4 x 10¹⁹/cm3, mobility = 163 cm2/(V-s) : 15553|48|1|1
    S         :    Co doped, nanostructured powder : 6%, carrier concentration = 1.1 x 10²⁰/cm3, mobility = 195 cm2/(V-s) : 15553|48|1|2
    S         :    Co doped, nanostructured powder : 8%, carrier concentration = 1.4 x 10²⁰/cm3, mobility = 215 cm2/(V-s) : 15553|48|1|3

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CdO

    RHO    (N):    nanostructured powder : carrier concentration = 3.2 x 10¹⁹/cm3, mobility = 130 cm2/(V-s) : 2660|2|0|0
    SIGMA (N):    nanostructured powder : carrier concentration = 3.2 x 10¹⁹/cm3, mobility = 130 cm2/(V-s) : 2660|10|0|0
    S      (N):    nanostructured powder : carrier concentration = 3.2 x 10¹⁹/cm3, mobility = 130 cm2/(V-s) : 2660|48|0|0

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Ce₀.₂₅Yb₀.₇₅Fe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 3.01 x 10²¹/cm3, mobility = 4.42 cm2/(V-s) : 15514|1|0|-1
    RHO       :    carrier concentration = 3.01 x 10²¹/cm3, mobility = 4.42 cm2/(V-s) : 15514|2|0|-1
    SIGMA    :    carrier concentration = 3.01 x 10²¹/cm3, mobility = 4.42 cm2/(V-s) : 15514|10|0|-1
    S         :    carrier concentration = 3.01 x 10²¹/cm3, mobility = 4.42 cm2/(V-s) : 15514|48|0|-1

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Ce₀.₂₅Yb₀.₇₅Fe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.7 x 10²¹/cm3, mobility = 5.75 cm2/(V-s) : 15517|1|0|-1
    RHO       :    carrier concentration = 1.7 x 10²¹/cm3, mobility = 5.75 cm2/(V-s) : 15517|2|0|-1
    SIGMA    :    carrier concentration = 1.7 x 10²¹/cm3, mobility = 5.75 cm2/(V-s) : 15517|10|0|-1
    S         :    carrier concentration = 1.7 x 10²¹/cm3, mobility = 5.75 cm2/(V-s) : 15517|48|0|-1

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Ce₀.₅Yb₀.₅Fe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.73 x 10²¹/cm3, mobility = 4.40 cm2/(V-s) : 15515|1|0|-1
    RHO       :    carrier concentration = 2.73 x 10²¹/cm3, mobility = 4.40 cm2/(V-s) : 15515|2|0|-1
    SIGMA    :    carrier concentration = 2.73 x 10²¹/cm3, mobility = 4.40 cm2/(V-s) : 15515|10|0|-1
    S         :    carrier concentration = 2.73 x 10²¹/cm3, mobility = 4.40 cm2/(V-s) : 15515|48|0|-1

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Ce₀.₅Yb₀.₅Fe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.6 x 10²¹/cm3, mobility = 5.33 cm2/(V-s) : 15518|1|0|-1
    RHO       :    carrier concentration = 1.6 x 10²¹/cm3, mobility = 5.33 cm2/(V-s) : 15518|2|0|-1
    SIGMA    :    carrier concentration = 1.6 x 10²¹/cm3, mobility = 5.33 cm2/(V-s) : 15518|10|0|-1
    S         :    carrier concentration = 1.6 x 10²¹/cm3, mobility = 5.33 cm2/(V-s) : 15518|48|0|-1

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Ce₀.₆Fe₂Co₂Sb₁₂ (New)

    TC        :    direct current assisted sintered : skutterudite prepared by melting elemental powders : 15536|1|0|0
    TC        :    direct current assisted sintered : skutterudite powder prepared from CeSb2 and Fe0.5Co0.5Sb2 powders : 15536|1|0|1
    TC        :    direct current assisted sintered : skutterudite powder prepared by gas atomized : 15536|1|0|2
    RHO       :    direct current assisted sintered : skutterudite prepared by melting elemental powders : 15536|2|0|0
    RHO       :    direct current assisted sintered : skutterudite powder prepared from CeSb2 and Fe0.5Co0.5Sb2 powders : 15536|2|0|1
    RHO       :    direct current assisted sintered : skutterudite powder prepared by gas atomized : 15536|2|0|2
    SIGMA    :    direct current assisted sintered : skutterudite prepared by melting elemental powders : 15536|10|0|0
    SIGMA    :    direct current assisted sintered : skutterudite powder prepared from CeSb2 and Fe0.5Co0.5Sb2 powders : 15536|10|0|1
    SIGMA    :    direct current assisted sintered : skutterudite powder prepared by gas atomized : 15536|10|0|2
    S         :    direct current assisted sintered : skutterudite powder prepared by melting elemental powders : 15536|48|0|0
    S         :    direct current assisted sintered : skutterudite powder prepared from CeSb2 and Fe0.5Co0.5Sb2 powders : 15536|48|0|1
    S         :    direct current assisted sintered : skutterudite powder prepared by gas atomized : 15536|48|0|2

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Ce₀.₇₅Yb₀.₂₅Fe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 1.81 x 10²¹/cm3, mobility = 6.03 cm2/(V-s) : 15516|1|0|-1
    RHO       :    carrier concentration = 1.81 x 10²¹/cm3, mobility = 6.03 cm2/(V-s) : 15516|2|0|-1
    SIGMA    :    carrier concentration = 1.81 x 10²¹/cm3, mobility = 6.03 cm2/(V-s) : 15516|10|0|-1
    S         :    carrier concentration = 1.81 x 10²¹/cm3, mobility = 6.03 cm2/(V-s) : 15516|48|0|-1

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Ce₀.₇₅Yb₀.₂₅Fe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.26 x 10²¹/cm3, mobility = 5.61 cm2/(V-s) : 15519|1|0|-1
    RHO       :    carrier concentration = 1.26 x 10²¹/cm3, mobility = 5.61 cm2/(V-s) : 15519|2|0|-1
    SIGMA    :    carrier concentration = 1.26 x 10²¹/cm3, mobility = 5.61 cm2/(V-s) : 15519|10|0|-1
    S         :    carrier concentration = 1.26 x 10²¹/cm3, mobility = 5.61 cm2/(V-s) : 15519|48|0|-1

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Ce₀.₈Fe₃.₅Ni₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 7.84 x 10²⁰/cm3, mobility = 4.18 cm2/(V-s) : 15511|1|0|-1
    RHO       :    carrier concentration = 7.84 x 10²⁰/cm3, mobility = 4.18 cm2/(V-s) : 15511|2|0|-1
    SIGMA    :    carrier concentration = 7.84 x 10²⁰/cm3, mobility = 4.18 cm2/(V-s) : 15511|10|0|-1
    S         :    carrier concentration = 7.84 x 10²⁰/cm3, mobility = 4.18 cm2/(V-s) : 15511|48|0|-1

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Ce₀.₈Fe₃.₇₅Ni₀.₂₅Sb₁₂ (New)

    TC        :    carrier concentration = 1.29 x 10²¹/cm3, mobility = 4.96 cm2/(V-s) : 15508|1|0|-1
    RHO       :    carrier concentration = 1.29 x 10²¹/cm3, mobility = 4.96 cm2/(V-s) : 15508|2|0|-1
    SIGMA    :    carrier concentration = 1.29 x 10²¹/cm3, mobility = 4.96 cm2/(V-s) : 15508|10|0|-1
    S         :    carrier concentration = 1.29 x 10²¹/cm3, mobility = 4.96 cm2/(V-s) : 15508|48|0|-1

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Ce₀.₉Fe₃.₅Ni₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 7.27 x 10²⁰/cm3, mobility = 4.07 cm2/(V-s) : 15512|1|0|-1
    RHO       :    carrier concentration = 7.27 x 10²⁰/cm3, mobility = 4.07 cm2/(V-s) : 15512|2|0|-1
    SIGMA    :    carrier concentration = 7.27 x 10²⁰/cm3, mobility = 4.07 cm2/(V-s) : 15512|10|0|-1
    S         :    carrier concentration = 7.27 x 10²⁰/cm3, mobility = 4.07 cm2/(V-s) : 15512|48|0|-1

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Ce₀.₉Fe₃.₇₅Ni₀.₂₅Sb₁₂ (New)

    TC        :    carrier concentration = 1.09 x 10²¹/cm3, mobility = 4.56 cm2/(V-s) : 15509|1|0|-1
    RHO       :    carrier concentration = 1.09 x 10²¹/cm3, mobility = 4.56 cm2/(V-s) : 15509|2|0|-1
    SIGMA    :    carrier concentration = 1.09 x 10²¹/cm3, mobility = 4.56 cm2/(V-s) : 15509|10|0|-1
    S         :    carrier concentration = 1.09 x 10²¹/cm3, mobility = 4.56 cm2/(V-s) : 15509|48|0|-1

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CeFe₃.₅Ni₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 7.17 x 10²⁰/cm3, mobility = 4 cm2/(V-s) : 15513|1|0|-1
    RHO       :    carrier concentration = 7.17 x 10²⁰/cm3, mobility = 4 cm2/(V-s) : 15513|2|0|-1
    SIGMA    :    carrier concentration = 7.17 x 10²⁰/cm3, mobility = 4 cm2/(V-s) : 15513|10|0|-1
    S         :    carrier concentration = 7.17 x 10²⁰/cm3, mobility = 4 cm2/(V-s) : 15513|48|0|-1

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CeFe₃.₇₅Ni₀.₂₅Sb₁₂ (New)

    TC        :    carrier concentration = 9.83 x 10²⁰/cm3, mobility = 4.32 cm2/(V-s) : 15510|1|0|-1
    RHO       :    carrier concentration = 9.83 x 10²⁰/cm3, mobility = 4.32 cm2/(V-s) : 15510|2|0|-1
    SIGMA    :    carrier concentration = 9.83 x 10²⁰/cm3, mobility = 4.32 cm2/(V-s) : 15510|10|0|-1
    S         :    carrier concentration = 9.83 x 10²⁰/cm3, mobility = 4.32 cm2/(V-s) : 15510|48|0|-1

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CeFe₄Sb₁₂ (Te doped) (New)

    TC        :    undoped : 15505|1|0|-1
    TC        :    Te doped : 0.1 Te : 15505|1|1|0
    TC        :    Te doped : 0.2 Te : 15505|1|1|1
    RHO       :    undoped : 15505|2|0|-1
    RHO       :    Te doped : 0.1 Te : 15505|2|1|0
    RHO       :    Te doped : 0.2 Te : 15505|2|1|1
    SIGMA    :    undoped : 15505|10|0|-1
    SIGMA    :    Te doped : 0.1 Te : 15505|10|1|0
    SIGMA    :    Te doped : 0.2 Te : 15505|10|1|1
    S         :    undoped : 15505|48|0|-1
    S         :    Te doped : 0.1 Te : 15505|48|1|0
    S         :    Te doped : 0.2 Te : 15505|48|1|1

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CoSb₃

    TC     (N):    pulsed plasma sintered : sintered at 650 °C (1202 °F), 99.7% dense : 1620|1|3|0
    TC     (N):    pulsed plasma sintered : sintered at 700 °C (1292 °F), 99.9% dense : 1620|1|3|1
    TC     (R):    average of plasma sintered samples : 1620|1|4|-1
    RHO    (N):    pulsed plasma sintered : sintered at 650 °C (1202 °F), 99.7% dense : 1620|2|3|0
    RHO    (N):    pulsed plasma sintered : sintered at 700 °C (1292 °F), 99.9% dense : 1620|2|3|1
    SIGMA (N):    pulsed plasma sintered : sintered at 650 °C (1202 °F), 99.7% dense : 1620|10|3|0
    SIGMA (N):    pulsed plasma sintered : sintered at 700 °C (1292 °F), 99.9% dense : 1620|10|3|1
    S      (N):    pulsed plasma sintered : sintered at 650 °C (1202 °F), 99.7% dense : 1620|48|1|0
    S      (N):    pulsed plasma sintered : sintered at 700 °C (1292 °F), 99.9% dense : 1620|48|1|1

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Cu₁₁.₅Ni₀.₅Sb₃.₂₅Te₀.₇₅S₁₃ (New)

    TC        :    spark plasma sintered : > 92% dense : 15542|1|0|0
    RHO       :    spark plasma sintered : > 92% dense : 15542|2|0|0
    SIGMA    :    spark plasma sintered : > 92% dense : 15542|10|0|0
    S         :    spark plasma sintered : > 92% dense : 15542|48|0|0

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Cu₁₁.₅Ni₀.₅Sb₃.₅Te₀.₅S₁₃ (New)

    TC        :    spark plasma sintered : > 92% dense : 15541|1|0|0
    RHO       :    spark plasma sintered : > 92% dense : 15541|2|0|0
    SIGMA    :    spark plasma sintered : > 92% dense : 15541|10|0|0
    S         :    spark plasma sintered : > 92% dense : 15541|48|0|0

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Cu₁₁.₅Ni₀.₅Sb₃TeS₁₃ (New)

    TC        :    spark plasma sintered : > 92% dense : 15543|1|0|0
    RHO       :    spark plasma sintered : > 92% dense : 15543|2|0|0
    SIGMA    :    spark plasma sintered : > 92% dense : 15543|10|0|0
    S         :    spark plasma sintered : > 92% dense : 15543|48|0|0

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Cu₁₁.₅Zn₀.₅Sb₂.₇₅Te₁.₂₅S₁₃ (New)

    TC        :    spark plasma sintered : > 92% dense : 15539|1|0|0
    RHO       :    spark plasma sintered : > 92% dense : 15539|2|0|0
    SIGMA    :    spark plasma sintered : > 92% dense : 15539|10|0|0
    S         :    spark plasma sintered : > 92% dense : 15539|48|0|0

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Cu₁₁.₅Zn₀.₅Sb₃TeS₁₃ (New)

    TC        :    spark plasma sintered : > 92% dense : 15538|1|0|0
    RHO       :    spark plasma sintered : > 92% dense : 15538|2|0|0
    SIGMA    :    spark plasma sintered : > 92% dense : 15538|10|0|0
    S         :    spark plasma sintered : > 92% dense : 15538|48|0|0

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Cu₁₁ZnSb₃.₅Te₀.₅S₁₃ (New)

    TC        :    spark plasma sintered : > 92% dense : 15540|1|0|0
    RHO       :    spark plasma sintered : > 92% dense : 15540|2|0|0
    SIGMA    :    spark plasma sintered : > 92% dense : 15540|10|0|0
    S         :    spark plasma sintered : > 92% dense : 15540|48|0|0

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Cu₂SnS₃

    TC     (N):    hot-pressed : 550 °C (1022 °F), carrier concentration = 1.2 x 10²⁰/cm3, mobility = 6.70 cm2/(V-s) : 14641|1|0|0
    TC     (N):    hot-pressed : 575 °C (1067 °F), carrier concentration = 1.8 x 10²⁰/cm3, mobility = 3.20 cm2/(V-s) : 14641|1|0|1
    TC     (N):    hot-pressed : 600 °C (1112 °F), carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 4.70 cm2/(V-s) : 14641|1|0|2
    TC     (N):    hot-pressed : 625 °C (1157 °F), carrier concentration = 5.7 x 10¹⁹/cm3, mobility = 6.10 cm2/(V-s) : 14641|1|0|3
    TC     (N):    hot-pressed : 650 °C (1202 °F), carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 6 cm2/(V-s) : 14641|1|0|4
    RHO    (N):    hot-pressed : 550 °C (1022 °F), carrier concentration = 1.2 x 10²⁰/cm3, mobility = 6.70 cm2/(V-s) : 14641|2|0|0
    RHO    (N):    hot-pressed : 575 °C (1067 °F), carrier concentration = 1.8 x 10²⁰/cm3, mobility = 3.20 cm2/(V-s) : 14641|2|0|1
    RHO    (N):    hot-pressed : 600 °C (1112 °F), carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 4.70 cm2/(V-s) : 14641|2|0|2
    RHO    (N):    hot-pressed : 625 °C (1157 °F), carrier concentration = 5.7 x 10¹⁹/cm3, mobility = 6.10 cm2/(V-s) : 14641|2|0|3
    RHO    (N):    hot-pressed : 650 °C (1202 °F), carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 6 cm2/(V-s) : 14641|2|0|4
    SIGMA (N):    hot-pressed : 550 °C (1022 °F), carrier concentration = 1.2 x 10²⁰/cm3, mobility = 6.70 cm2/(V-s) : 14641|10|0|0
    SIGMA (N):    hot-pressed : 575 °C (1067 °F), carrier concentration = 1.8 x 10²⁰/cm3, mobility = 3.20 cm2/(V-s) : 14641|10|0|1
    SIGMA (N):    hot-pressed : 600 °C (1112 °F), carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 4.70 cm2/(V-s) : 14641|10|0|2
    SIGMA (N):    hot-pressed : 625 °C (1157 °F), carrier concentration = 5.7 x 10¹⁹/cm3, mobility = 6.10 cm2/(V-s) : 14641|10|0|3
    SIGMA (N):    hot-pressed : 650 °C (1202 °F), carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 6 cm2/(V-s) : 14641|10|0|4
    S      (N):    hot-pressed : 550 °C (1022 °F), carrier concentration = 1.2 x 10²⁰/cm3, mobility = 6.70 cm2/(V-s) : 14641|48|0|0
    S      (N):    hot-pressed : 575 °C (1067 °F), carrier concentration = 1.8 x 10²⁰/cm3, mobility = 3.20 cm2/(V-s) : 14641|48|0|1
    S      (N):    hot-pressed : 600 °C (1112 °F), carrier concentration = 5.8 x 10¹⁹/cm3, mobility = 4.70 cm2/(V-s) : 14641|48|0|2
    S      (N):    hot-pressed : 625 °C (1157 °F), carrier concentration = 5.7 x 10¹⁹/cm3, mobility = 6.10 cm2/(V-s) : 14641|48|0|3
    S      (N):    hot-pressed : 650 °C (1202 °F), carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 6 cm2/(V-s) : 14641|48|0|4

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Cu₂ZnGeSe₄ (In doped) (New)

    TC        :    undoped : carrier concentration = 0.25 x 10²⁰/cm3 : 15544|1|0|0
    TC        :    indium doped : 0.025 In, carrier concentration = 6.6 x 10²⁰/cm3 : 15544|1|1|0
    TC        :    indium doped : 0.05 In, carrier concentration = 2.6 x 10²⁰/cm3 : 15544|1|1|1
    TC        :    indium doped : 0.075 In, carrier concentration = 1.3 x 10²⁰/cm3 : 15544|1|1|2
    TC        :    indium doped : 0.1 In, carrier concentration = 1.5 x 10²⁰/cm3 : 15544|1|1|3
    RHO       :    undoped : carrier concentration = 0.25 x 10²⁰/cm3 : 15544|2|0|0
    RHO       :    indium doped : 0.025 In, carrier concentration = 6.6 x 10²⁰/cm3 : 15544|2|1|0
    RHO       :    indium doped : 0.05 In, carrier concentration = 2.6 x 10²⁰/cm3 : 15544|2|1|1
    RHO       :    indium doped : 0.075 In, carrier concentration = 1.3 x 10²⁰/cm3 : 15544|2|1|2
    RHO       :    indium doped : 0.1 In, carrier concentration = 1.5 x 10²⁰/cm3 : 15544|2|1|3
    SIGMA    :    undoped : carrier concentration = 0.25 x 10²⁰/cm3 : 15544|10|0|0
    SIGMA    :    indium doped : 0.025 In, carrier concentration = 6.6 x 10²⁰/cm3 : 15544|10|1|0
    SIGMA    :    indium doped : 0.05 In, carrier concentration = 2.6 x 10²⁰/cm3 : 15544|10|1|1
    SIGMA    :    indium doped : 0.075 In, carrier concentration = 1.3 x 10²⁰/cm3 : 15544|10|1|2
    SIGMA    :    indium doped : 0.1 In, carrier concentration = 1.5 x 10²⁰/cm3 : 15544|10|1|3
    S         :    undoped : carrier concentration = 0.25 x 10²⁰/cm3 : 15544|48|0|0
    S         :    indium doped : 0.025 In, carrier concentration = 6.6 x 10²⁰/cm3 : 15544|48|1|0
    S         :    indium doped : 0.05 In, carrier concentration = 2.6 x 10²⁰/cm3 : 15544|48|1|1
    S         :    indium doped : 0.075 In, carrier concentration = 1.3 x 10²⁰/cm3 : 15544|48|1|2
    S         :    indium doped : 0.1 In, carrier concentration = 1.5 x 10²⁰/cm3 : 15544|48|1|3

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CuFeS₁.₅Se₀.₅ (New)

    TC        :    hot-pressed : 15533|1|0|-1
    RHO       :    hot-pressed : 15533|2|0|-1
    SIGMA    :    hot-pressed : 15533|10|0|-1
    S         :    hot-pressed : 15533|48|0|-1

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CuFeS₁.₆Se₀.₄ (New)

    TC        :    hot-pressed : 15532|1|0|-1
    RHO       :    hot-pressed : 15532|2|0|-1
    SIGMA    :    hot-pressed : 15532|10|0|-1
    S         :    hot-pressed : 15532|48|0|-1

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CuFeS₁.₇Se₀.₃ (New)

    TC        :    hot-pressed : 15531|1|0|-1
    RHO       :    hot-pressed : 15531|2|0|-1
    SIGMA    :    hot-pressed : 15531|10|0|-1
    S         :    hot-pressed : 15531|48|0|-1

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CuFeS₁.₈Se₀.₂ (New)

    TC        :    hot-pressed : 15530|1|0|-1
    RHO       :    hot-pressed : 15530|2|0|-1
    SIGMA    :    hot-pressed : 15530|10|0|-1
    S         :    hot-pressed : 15530|48|0|-1

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CuFeS₁.₉Se₀.₁ (New)

    TC        :    hot-pressed : 15529|1|0|-1
    RHO       :    hot-pressed : 15529|2|0|-1
    SIGMA    :    hot-pressed : 15529|10|0|-1
    S         :    hot-pressed : 15529|48|0|-1

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CuFeS₂

    TC     (N):    hot-pressed : 14609|1|0|-1
    RHO    (N):    hot-pressed : 14609|2|0|-1
    SIGMA (N):    hot-pressed : 14609|10|0|-1
    S      (N):    hot-pressed : 14609|48|0|-1

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EuZn₂Sb₂ (New)

    TC        :    spark plasma sintered : carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 186 cm2/(V-s) : 15194|1|0|0
    RHO       :    spark plasma sintered : carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 186 cm2/(V-s) : 15194|2|0|0
    SIGMA    :    spark plasma sintered : carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 186 cm2/(V-s) : 15194|10|0|0
    S         :    spark plasma sintered : carrier concentration = 2.94 x 10¹⁹/cm3, mobility = 186 cm2/(V-s) : 15194|48|0|0

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Fe₁.₅Co₂.₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.3 x 10²⁰/cm3, mobility = 42 cm2/(V-s) : 15472|1|0|-1
    RHO       :    carrier concentration = 2.3 x 10²⁰/cm3, mobility = 42 cm2/(V-s) : 15472|2|0|-1
    SIGMA    :    carrier concentration = 2.3 x 10²⁰/cm3, mobility = 42 cm2/(V-s) : 15472|10|0|-1
    D     (*):    solid : 15472|24|0|-1
    S         :    carrier concentration = 2.3 x 10²⁰/cm3, mobility = 42 cm2/(V-s) : 15472|48|0|-1

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Fe₂V₀.₈Al₁.₂ (New)

    TC        :    solid : 15520|1|0|-1

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Fe₂V₀.₉₄Al₁.₀₆ (New)

    TC        :    solid : 15522|1|0|-1

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Fe₂V₀.₉₆Al₁.₀₄ (New)

    TC        :    solid : 15523|1|0|-1

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Fe₂V₀.₉Al₁.₁ (New)

    TC        :    solid : 15521|1|0|-1

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Fe₂V₁.₀₄Al₀.₉₆ (New)

    TC        :    solid : 15525|1|0|-1

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Fe₂V₁.₀₆Al₀.₉₄ (New)

    TC        :    solid : 15526|1|0|-1

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Fe₂V₁.₁Al₀.₉ (New)

    TC        :    solid : 15527|1|0|-1

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Fe₂V₁.₂Al₀.₈ (New)

    TC        :    solid : 15528|1|0|-1

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Fe₂VAl (New)

    TC        :    solid : 15524|1|0|-1
    RHO       :    solid : 15524|2|0|-1
    SIGMA    :    solid : 15524|10|0|-1
    S     (*):    solid : 15524|48|0|-1

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Ge₁₋ₓTeInₓ (New)

    TC        :    x = 0.05 : 15469|1|0|-1
    TC        :    x = 0.1 : 15469|1|1|-1
    TC        :    x = 0.15 : 15469|1|2|-1
    RHO       :    x = 0.05 : 15469|2|0|-1
    RHO       :    x = 0.1 : 15469|2|1|-1
    RHO       :    x = 0.15 : 15469|2|2|-1
    SIGMA    :    x = 0.05 : 15469|10|0|-1
    SIGMA    :    x = 0.1 : 15469|10|1|-1
    SIGMA    :    x = 0.15 : 15469|10|2|-1
    S         :    x = 0.05 : 15469|48|0|-1
    S         :    x = 0.1 : 15469|48|1|-1
    S         :    x = 0.15 : 15469|48|2|-1

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Ge₂Sb₂Te₅

    RHO    (N):    bulk material : carrier concentration = 2.9 x 10²⁰/cm3, mobility = 52 cm2/(V-s), Shelimova et. al. : 14594|2|0|1
    RHO    (N):    thin film : thermal evaporated, amorphous : 14594|2|1|1
    SIGMA (N):    bulk material : carrier concentration = 2.9 x 10²⁰/cm3, mobility = 52 cm2/(V-s), Shelimova et. al. : 14594|10|0|1
    SIGMA (N):    thin film : thermal evaporated, amorphous : 14594|10|1|1
    D     (N*):    solid : 14594|24|0|-1
    S      (N):    bulk material : carrier concentration = 2.9 x 10²⁰/cm3, mobility = 52 cm2/(V-s) : 14594|48|0|0

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Ge₃Sb₂Te₆ (New)

    RHO       :    bulk material : carrier concentration = 2.9 x 10²⁰/cm3, mobility = 62 cm2/(V-s) : 15466|2|0|0
    SIGMA    :    bulk material : carrier concentration = 2.9 x 10²⁰/cm3, mobility = 62 cm2/(V-s) : 15466|10|0|0
    D     (*):    solid : 15466|24|0|-1
    S         :    bulk material : carrier concentration = 2.9 x 10²⁰/cm3, mobility = 62 cm2/(V-s) : 15466|48|0|0

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GeSb₂Te₄ (New)

    RHO       :    bulk material : carrier concentration = 2.6 x 10²⁰/cm3, mobility = 54 cm2/(V-s) : 15467|2|0|0
    SIGMA    :    bulk material : carrier concentration = 2.6 x 10²⁰/cm3, mobility = 54 cm2/(V-s) : 15467|10|0|0
    D     (*):    solid : 15467|24|0|-1
    S         :    bulk material : carrier concentration = 2.6 x 10²⁰/cm3, mobility = 54 cm2/(V-s) : 15467|48|0|0

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GeSb₄Te₇ (New)

    RHO       :    bulk material : carrier concentration = 2.6 x 10²⁰/cm3, mobility = 50 cm2/(V-s) : 15423|2|0|0
    SIGMA    :    bulk material : carrier concentration = 2.6 x 10²⁰/cm3, mobility = 50 cm2/(V-s) : 15423|10|0|0
    D     (*):    solid : 15423|24|0|-1
    S     (*):    bulk material : carrier concentration = 2.6 x 10²⁰/cm3, mobility = 50 cm2/(V-s) : 15423|48|0|0

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GeSb₆Te₁₀ (New)

    RHO       :    bulk material : carrier concentration = 2.7 x 10²⁰/cm3, mobility = 30 cm2/(V-s) : 15471|2|0|0
    SIGMA    :    bulk material : carrier concentration = 2.7 x 10²⁰/cm3, mobility = 30 cm2/(V-s) : 15471|10|0|0
    D     (*):    solid : 15471|24|0|-1
    S     (*):    bulk material : carrier concentration = 2.7 x 10²⁰/cm3, mobility = 30 cm2/(V-s) : 15471|48|0|0

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GeTe

    TC     (N):    bulk material : hot-pressed, Huang et. al. : 15416|1|0|0
    TC     (N):    bulk material : hot-pressed, Dong et. al. : 15416|1|0|1
    RHO    (N):    bulk material : hot-pressed, Huang et. al. : 15416|2|0|0
    RHO    (N):    bulk material : hot-pressed, Dong et. al. : 15416|2|0|1
    RHO    (N):    bulk material : carrier concentration = 3.4 x 10²⁰/cm3, mobility = 124 cm2/(V-s), Shelimova et. al. : 15416|2|0|2
    RHO    (N):    thin film : thermal evaporated, amorphous : 15416|2|1|1
    SIGMA (N):    bulk material : hot-pressed, Huang et. al. : 15416|10|0|0
    SIGMA (N):    bulk material : hot-pressed, Dong et. al. : 15416|10|0|1
    SIGMA (N):    bulk material : carrier concentration = 3.4 x 10²⁰/cm3, mobility = 124 cm2/(V-s), Shelimova et. al. : 15416|10|0|2
    SIGMA (N):    thin film : thermal evaporated, amorphous : 15416|10|1|1
    D     (N*):    solid : 15416|24|0|-1
    TD     (N):    bulk material : hot-pressed, Huang et. al. : 15416|25|0|0
    TD     (N):    bulk material : hot-pressed, Dong et. al. : 15416|25|0|1
    S      (N):    bulk material : hot-pressed, Huang et. al. : 15416|48|0|0
    S      (N):    bulk material : hot-pressed, Dong et. al. : 15416|48|0|1
    S      (N):    bulk material : carrier concentration = 3.4 x 10²⁰/cm3, mobility = 124 cm2/(V-s), Shelimova et. al. : 15416|48|0|2

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InGaZnO amorphous film (New)

    RHO       :    200 nm amorphous film : 0% oxygen in gas, carrier concentration = 9.8 x 10¹⁹/cm3, mobility = 12.8 cm2/(V-s) : 15535|2|0|0
    RHO       :    200 nm amorphous film : 1% oxygen in gas, carrier concentration = 7.7 x 10¹⁹/cm3, mobility = 12.6 cm2/(V-s) : 15535|2|0|1
    RHO       :    200 nm amorphous film : 2% oxygen in gas, carrier concentration = 3.4 x 10¹⁹/cm3, mobility = 9.93 cm2/(V-s) : 15535|2|0|2
    RHO       :    200 nm amorphous film : 3% oxygen in gas, carrier concentration = 3.4 x 10¹⁹/cm3, mobility = 9.93 cm2/(V-s) : 15535|2|0|3
    RHO       :    200 nm amorphous film : 4.5% oxygen in gas, carrier concentration = 3.5 x 10¹⁸/cm3, mobility = 8.10 cm2/(V-s) : 15535|2|0|4
    RHO       :    200 nm amorphous film : 6% oxygen in gas, carrier concentration = 3.6 x 10¹⁷/cm3, mobility = 4.19 cm2/(V-s) : 15535|2|0|5
    SIGMA    :    200 nm amorphous film : 0% oxygen in gas, carrier concentration = 9.8 x 10¹⁹/cm3, mobility = 12.8 cm2/(V-s) : 15535|10|0|0
    SIGMA    :    200 nm amorphous film : 1% oxygen in gas, carrier concentration = 7.7 x 10¹⁹/cm3, mobility = 12.6 cm2/(V-s) : 15535|10|0|1
    SIGMA    :    200 nm amorphous film : 2% oxygen in gas, carrier concentration = 3.4 x 10¹⁹/cm3, mobility = 9.93 cm2/(V-s) : 15535|10|0|2
    SIGMA    :    200 nm amorphous film : 3% oxygen in gas, carrier concentration = 3.4 x 10¹⁹/cm3, mobility = 9.93 cm2/(V-s) : 15535|10|0|3
    SIGMA    :    200 nm amorphous film : 4.5% oxygen in gas, carrier concentration = 3.5 x 10¹⁸/cm3, mobility = 8.10 cm2/(V-s) : 15535|10|0|4
    SIGMA    :    200 nm amorphous film : 6% oxygen in gas, carrier concentration = 3.6 x 10¹⁷/cm3, mobility = 4.19 cm2/(V-s) : 15535|10|0|5
    S         :    200 nm amorphous film : 0% oxygen in gas, carrier concentration = 9.8 x 10¹⁹/cm3, mobility = 12.8 cm2/(V-s) : 15535|48|0|0
    S         :    200 nm amorphous film : 1% oxygen in gas, carrier concentration = 7.7 x 10¹⁹/cm3, mobility = 12.6 cm2/(V-s) : 15535|48|0|1
    S         :    200 nm amorphous film : 2% oxygen in gas, carrier concentration = 3.4 x 10¹⁹/cm3, mobility = 9.93 cm2/(V-s) : 15535|48|0|2
    S         :    200 nm amorphous film : 3% oxygen in gas, carrier concentration = 3.4 x 10¹⁹/cm3, mobility = 9.93 cm2/(V-s) : 15535|48|0|3
    S         :    200 nm amorphous film : 4.5% oxygen in gas, carrier concentration = 3.5 x 10¹⁸/cm3, mobility = 8.10 cm2/(V-s) : 15535|48|0|4
    S         :    200 nm amorphous film : 6% oxygen in gas, carrier concentration = 3.6 x 10¹⁷/cm3, mobility = 4.19 cm2/(V-s) : 15535|48|0|5

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La₀.₂₅Pr₀.₇₅Fe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.08 x 10²¹/cm3, mobility = 5.26 cm2/(V-s) : 15493|1|0|-1
    RHO       :    carrier concentration = 2.08 x 10²¹/cm3, mobility = 5.26 cm2/(V-s) : 15493|2|0|-1
    SIGMA    :    carrier concentration = 2.08 x 10²¹/cm3, mobility = 5.26 cm2/(V-s) : 15493|10|0|-1
    S         :    carrier concentration = 2.08 x 10²¹/cm3, mobility = 5.26 cm2/(V-s) : 15493|48|0|-1

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La₀.₂₅Pr₀.₇₅Fe₃.₇₅Co₀.₂₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.54 x 10²¹/cm3, mobility = 4.98 cm2/(V-s) : 15491|1|0|-1
    RHO       :    carrier concentration = 2.54 x 10²¹/cm3, mobility = 4.98 cm2/(V-s) : 15491|2|0|-1
    SIGMA    :    carrier concentration = 2.54 x 10²¹/cm3, mobility = 4.98 cm2/(V-s) : 15491|10|0|-1
    S         :    carrier concentration = 2.54 x 10²¹/cm3, mobility = 4.98 cm2/(V-s) : 15491|48|0|-1

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La₀.₂₅Pr₀.₇₅Fe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.45 x 10²¹/cm3, mobility = 5.42 cm2/(V-s) : 15495|1|0|-1
    RHO       :    carrier concentration = 1.45 x 10²¹/cm3, mobility = 5.42 cm2/(V-s) : 15495|2|0|-1
    SIGMA    :    carrier concentration = 1.45 x 10²¹/cm3, mobility = 5.42 cm2/(V-s) : 15495|10|0|-1
    S         :    carrier concentration = 1.45 x 10²¹/cm3, mobility = 5.42 cm2/(V-s) : 15495|48|0|-1

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La₀.₂₅Pr₀.₇₅Fe₄Sb₁₂ (New)

    TC        :    carrier concentration = 3 x 10²¹/cm3, mobility = 4.45 cm2/(V-s) : 15489|1|0|-1
    RHO       :    carrier concentration = 3 x 10²¹/cm3, mobility = 4.45 cm2/(V-s) : 15489|2|0|-1
    SIGMA    :    carrier concentration = 3 x 10²¹/cm3, mobility = 4.45 cm2/(V-s) : 15489|10|0|-1
    S         :    carrier concentration = 3 x 10²¹/cm3, mobility = 4.45 cm2/(V-s) : 15489|48|0|-1

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La₀.₇₅Pr₀.₂₅Fe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.11 x 10²¹/cm3, mobility = 5.20 cm2/(V-s) : 15492|1|0|-1
    RHO       :    carrier concentration = 2.11 x 10²¹/cm3, mobility = 5.20 cm2/(V-s) : 15492|2|0|-1
    SIGMA    :    carrier concentration = 2.11 x 10²¹/cm3, mobility = 5.20 cm2/(V-s) : 15492|10|0|-1
    S         :    carrier concentration = 2.11 x 10²¹/cm3, mobility = 5.20 cm2/(V-s) : 15492|48|0|-1

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La₀.₇₅Pr₀.₂₅Fe₃.₇₅Co₀.₂₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.6 x 10²¹/cm3, mobility = 4.94 cm2/(V-s) : 15490|1|0|-1
    RHO       :    carrier concentration = 2.6 x 10²¹/cm3, mobility = 4.94 cm2/(V-s) : 15490|2|0|-1
    SIGMA    :    carrier concentration = 2.6 x 10²¹/cm3, mobility = 4.94 cm2/(V-s) : 15490|10|0|-1
    S         :    carrier concentration = 2.6 x 10²¹/cm3, mobility = 4.94 cm2/(V-s) : 15490|48|0|-1

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La₀.₇₅Pr₀.₂₅Fe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.78 x 10²¹/cm3, mobility = 5.05 cm2/(V-s) : 15494|1|0|-1
    RHO       :    carrier concentration = 1.78 x 10²¹/cm3, mobility = 5.05 cm2/(V-s) : 15494|2|0|-1
    SIGMA    :    carrier concentration = 1.78 x 10²¹/cm3, mobility = 5.05 cm2/(V-s) : 15494|10|0|-1
    S         :    carrier concentration = 1.78 x 10²¹/cm3, mobility = 5.05 cm2/(V-s) : 15494|48|0|-1

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La₀.₇₅Pr₀.₂₅Fe₄Sb₁₂ (New)

    TC        :    carrier concentration = 3.18 x 10²¹/cm3, mobility = 4.57 cm2/(V-s) : 15488|1|0|-1
    RHO       :    carrier concentration = 3.18 x 10²¹/cm3, mobility = 4.57 cm2/(V-s) : 15488|2|0|-1
    SIGMA    :    carrier concentration = 3.18 x 10²¹/cm3, mobility = 4.57 cm2/(V-s) : 15488|10|0|-1
    S         :    carrier concentration = 3.18 x 10²¹/cm3, mobility = 4.57 cm2/(V-s) : 15488|48|0|-1

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Mg₂Si (Sb doped)

    TC     (N):    Sb doped : 8000 ppm Sn, sludge grade Si, carrier concentration = 1.6 x 10²⁰/cm3, mobility = 90.2 cm2/(V-s) : 2607|1|1|0
    TC     (N):    Sb doped : 8000 ppm Sn, metal grade Si, carrier concentration = 6.2 x 10¹⁹/cm3, mobility = 150 cm2/(V-s) : 2607|1|1|1
    TC     (N):    Sb doped : 8000 ppm Sn, solar grade Si, carrier concentration = 7.8 x 10¹⁹/cm3, mobility = 134 cm2/(V-s) : 2607|1|1|2
    RHO   (N*):    undoped : Kubouchi et. al. : 2607|2|0|0
    RHO    (N):    Sb doped : 8000 ppm Sn, sludge grade Si, carrier concentration = 1.6 x 10²⁰/cm3, mobility = 90.2 cm2/(V-s) : 2607|2|1|0
    RHO    (N):    Sb doped : 8000 ppm Sn, metal grade Si, carrier concentration = 6.2 x 10¹⁹/cm3, mobility = 150 cm2/(V-s) : 2607|2|1|1
    RHO    (N):    Sb doped : 8000 ppm Sn, solar grade Si, carrier concentration = 7.8 x 10¹⁹/cm3, mobility = 134 cm2/(V-s) : 2607|2|1|2
    SIGMA (N*):    undoped : Kubouchi et. al. : 2607|10|0|0
    SIGMA (N):    Sb doped : 8000 ppm Sn, sludge grade Si, carrier concentration = 1.6 x 10²⁰/cm3, mobility = 90.2 cm2/(V-s) : 2607|10|1|0
    SIGMA (N):    Sb doped : 8000 ppm Sn, metal grade Si, carrier concentration = 6.2 x 10¹⁹/cm3, mobility = 150 cm2/(V-s) : 2607|10|1|1
    SIGMA (N):    Sb doped : 8000 ppm Sn, solar grade Si, carrier concentration = 7.8 x 10¹⁹/cm3, mobility = 134 cm2/(V-s) : 2607|10|1|2
    S     (N*):    undoped : Kubouchi et. al. : 2607|48|0|0
    S      (N):    Sb doped : 8000 ppm Sn, sludge grade Si, carrier concentration = 1.6 x 10²⁰/cm3, mobility = 90.2 cm2/(V-s) : 2607|48|1|0
    S      (N):    Sb doped : 8000 ppm Sn, metal grade Si, carrier concentration = 6.2 x 10¹⁹/cm3, mobility = 150 cm2/(V-s) : 2607|48|1|1
    S      (N):    Sb doped : 8000 ppm Sn, solar grade Si, carrier concentration = 7.8 x 10¹⁹/cm3, mobility = 134 cm2/(V-s) : 2607|48|1|2

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Mg₂Si₀.₂Sn₀.₈ (Li dopant) (New)

    RHO       :    Li doped : 1 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15450|2|0|0
    RHO       :    Li doped : 2 at% Li, carrier concentration = 3.2 x 10²⁰/cm3 : 15450|2|0|1
    SIGMA    :    Li doped : 1 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15450|10|0|0
    SIGMA    :    Li doped : 2 at% Li, carrier concentration = 3.2 x 10²⁰/cm3 : 15450|10|0|1
    S         :    Li doped : 1 at% Li, carrier concentration = 2.1 x 10²⁰/cm3 : 15450|48|0|0
    S         :    Li doped : 2 at% Li, carrier concentration = 3.2 x 10²⁰/cm3 : 15450|48|0|1

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Mg₂Si₀.₃Sn₀.₇ (Bi and Li dopants)

    RHO    (N):    Li doped : 0.5 at% Li, carrier concentration = 1.6 x 10²⁰/cm3 : 14615|2|1|0
    RHO    (N):    Li doped : 1.5 at% Li, carrier concentration = 1.2 x 10²⁰/cm3 : 14615|2|1|1
    E      (N):    average of all : 14615|3|3|-1
    SIGMA (N):    Li doped : 0.5 at% Li, carrier concentration = 1.6 x 10²⁰/cm3 : 14615|10|1|0
    SIGMA (N):    Li doped : 1.5 at% Li, carrier concentration = 1.2 x 10²⁰/cm3 : 14615|10|1|1
    G     (N*):    average of all : 14615|11|3|-1
    v     (N*):    average of all : 14615|19|3|-1
    K     (N*):    average of all : 14615|27|3|-1
    S      (N):    Li doped : 0.5 at% Li, carrier concentration = 1.6 x 10²⁰/cm3 : 14615|48|1|0
    S      (N):    Li doped : 1.5 at% Li, carrier concentration = 1.2 x 10²⁰/cm3 : 14615|48|1|1

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Mg₂Si₀.₄Sn₀.₆ (Li dopant) (New)

    RHO       :    Li doped : 1 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15449|2|0|0
    RHO       :    Li doped : 2 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15449|2|0|1
    SIGMA    :    Li doped : 1 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15449|10|0|0
    SIGMA    :    Li doped : 2 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15449|10|0|1
    S         :    Li doped : 1 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15449|48|0|0
    S         :    Li doped : 2 at% Li, carrier concentration = 1.8 x 10²⁰/cm3 : 15449|48|0|1

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Mn₂.₇Cr₀.₃Si₄Al₂₋ₓInₓ (New)

    TC        :    undoped : 15487|1|0|-1
    TC        :    In doped : x = 0.05, carrier concentration = 5.1 x 10²¹/cm3, mobility = 0.98 cm2/(V-s) : 15487|1|1|0
    TC        :    In doped : x = 0.1, carrier concentration = 4.3 x 10²¹/cm3, mobility = 1.18 cm2/(V-s) : 15487|1|1|1
    TC        :    In doped : x = 0.15, carrier concentration = 3.7 x 10²¹/cm3, mobility = 1.26 cm2/(V-s) : 15487|1|1|2
    TC        :    In doped : x = 0.2, carrier concentration = 2.7 x 10²¹/cm3, mobility = 1.71 cm2/(V-s) : 15487|1|1|3
    TC        :    In doped : x = 0.4 : 15487|1|1|4
    TC        :    In doped : x = 0.6 : 15487|1|1|5
    TC        :    In doped : x = 0.8 : 15487|1|1|6
    TC        :    In doped : x = 1 : 15487|1|1|7
    RHO       :    undoped : 15487|2|0|-1
    RHO       :    In doped : x = 0.05, carrier concentration = 5.1 x 10²¹/cm3, mobility = 0.98 cm2/(V-s) : 15487|2|1|0
    RHO       :    In doped : x = 0.1, carrier concentration = 4.3 x 10²¹/cm3, mobility = 1.18 cm2/(V-s) : 15487|2|1|1
    RHO       :    In doped : x = 0.15, carrier concentration = 3.7 x 10²¹/cm3, mobility = 1.26 cm2/(V-s) : 15487|2|1|2
    RHO       :    In doped : x = 0.2, carrier concentration = 2.7 x 10²¹/cm3, mobility = 1.71 cm2/(V-s) : 15487|2|1|3
    RHO       :    In doped : x = 0.4 : 15487|2|1|4
    RHO       :    In doped : x = 0.6 : 15487|2|1|5
    RHO       :    In doped : x = 0.8 : 15487|2|1|6
    RHO       :    In doped : x = 1 : 15487|2|1|7
    SIGMA    :    undoped : 15487|10|0|-1
    SIGMA    :    In doped : x = 0.05, carrier concentration = 5.1 x 10²¹/cm3, mobility = 0.98 cm2/(V-s) : 15487|10|1|0
    SIGMA    :    In doped : x = 0.1, carrier concentration = 4.3 x 10²¹/cm3, mobility = 1.18 cm2/(V-s) : 15487|10|1|1
    SIGMA    :    In doped : x = 0.15, carrier concentration = 3.7 x 10²¹/cm3, mobility = 1.26 cm2/(V-s) : 15487|10|1|2
    SIGMA    :    In doped : x = 0.2, carrier concentration = 2.7 x 10²¹/cm3, mobility = 1.71 cm2/(V-s) : 15487|10|1|3
    SIGMA    :    In doped : x = 0.4 : 15487|10|1|4
    SIGMA    :    In doped : x = 0.6 : 15487|10|1|5
    SIGMA    :    In doped : x = 0.8 : 15487|10|1|6
    SIGMA    :    In doped : x = 1 : 15487|10|1|7
    S         :    undoped : 15487|48|0|-1
    S         :    In doped : x = 0.05, carrier concentration = 5.1 x 10²¹/cm3, mobility = 0.98 cm2/(V-s) : 15487|48|1|0
    S         :    In doped : x = 0.1, carrier concentration = 4.3 x 10²¹/cm3, mobility = 1.18 cm2/(V-s) : 15487|48|1|1
    S         :    In doped : x = 0.15, carrier concentration = 3.7 x 10²¹/cm3, mobility = 1.26 cm2/(V-s) : 15487|48|1|2
    S         :    In doped : x = 0.2, carrier concentration = 2.7 x 10²¹/cm3, mobility = 1.71 cm2/(V-s) : 15487|48|1|3
    S         :    In doped : x = 0.4 : 15487|48|1|4
    S         :    In doped : x = 0.6 : 15487|48|1|5
    S         :    In doped : x = 0.8 : 15487|48|1|6
    S         :    In doped : x = 1 : 15487|48|1|7

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MnTe (New)

    S         :    thin film : epitaxially grown single crystal film, annealed : 15464|48|0|0

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Mo₂C MXene + Al binder (New)

    RHO       :    solid : 15551|2|0|-1
    SIGMA    :    solid : 15551|10|0|-1
    TD        :    solid : 15551|25|0|-1
    S         :    solid : 15551|48|0|-1

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Nd₀.₈Fe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.61 x 10²¹/cm3, mobility = 4.80 cm2/(V-s) : 15499|1|0|-1
    RHO       :    carrier concentration = 2.61 x 10²¹/cm3, mobility = 4.80 cm2/(V-s) : 15499|2|0|-1
    SIGMA    :    carrier concentration = 2.61 x 10²¹/cm3, mobility = 4.80 cm2/(V-s) : 15499|10|0|-1
    S         :    carrier concentration = 2.61 x 10²¹/cm3, mobility = 4.80 cm2/(V-s) : 15499|48|0|-1

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Nd₀.₈Fe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.75 x 10²¹/cm3, mobility = 5.36 cm2/(V-s) : 15502|1|0|-1
    RHO       :    carrier concentration = 1.75 x 10²¹/cm3, mobility = 5.36 cm2/(V-s) : 15502|2|0|-1
    SIGMA    :    carrier concentration = 1.75 x 10²¹/cm3, mobility = 5.36 cm2/(V-s) : 15502|10|0|-1
    S         :    carrier concentration = 1.75 x 10²¹/cm3, mobility = 5.36 cm2/(V-s) : 15502|48|0|-1

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Nd₀.₈Fe₄Sb₁₂ (New)

    TC        :    carrier concentration = 3.78 x 10²¹/cm3, mobility = 4.05 cm2/(V-s) : 15496|1|0|-1
    RHO       :    carrier concentration = 3.78 x 10²¹/cm3, mobility = 4.05 cm2/(V-s) : 15496|2|0|-1
    SIGMA    :    carrier concentration = 3.78 x 10²¹/cm3, mobility = 4.05 cm2/(V-s) : 15496|10|0|-1
    S         :    carrier concentration = 3.78 x 10²¹/cm3, mobility = 4.05 cm2/(V-s) : 15496|48|0|-1

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Nd₀.₉Fe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.53 x 10²¹/cm3, mobility = 4.85 cm2/(V-s) : 15500|1|0|-1
    RHO       :    carrier concentration = 2.53 x 10²¹/cm3, mobility = 4.85 cm2/(V-s) : 15500|2|0|-1
    SIGMA    :    carrier concentration = 2.53 x 10²¹/cm3, mobility = 4.85 cm2/(V-s) : 15500|10|0|-1
    S         :    carrier concentration = 2.53 x 10²¹/cm3, mobility = 4.85 cm2/(V-s) : 15500|48|0|-1

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Nd₀.₉Fe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.68 x 10²¹/cm3, mobility = 5.44 cm2/(V-s) : 15503|1|0|-1
    RHO       :    carrier concentration = 1.68 x 10²¹/cm3, mobility = 5.44 cm2/(V-s) : 15503|2|0|-1
    SIGMA    :    carrier concentration = 1.68 x 10²¹/cm3, mobility = 5.44 cm2/(V-s) : 15503|10|0|-1
    S         :    carrier concentration = 1.68 x 10²¹/cm3, mobility = 5.44 cm2/(V-s) : 15503|48|0|-1

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Nd₀.₉Fe₄Sb₁₂ (New)

    TC        :    carrier concentration = 3.61 x 10²¹/cm3, mobility = 4.15 cm2/(V-s) : 15497|1|0|-1
    RHO       :    carrier concentration = 3.61 x 10²¹/cm3, mobility = 4.15 cm2/(V-s) : 15497|2|0|-1
    SIGMA    :    carrier concentration = 3.61 x 10²¹/cm3, mobility = 4.15 cm2/(V-s) : 15497|10|0|-1
    S         :    carrier concentration = 3.61 x 10²¹/cm3, mobility = 4.15 cm2/(V-s) : 15497|48|0|-1

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NdFe₃.₅Co₀.₅Sb₁₂ (New)

    TC        :    carrier concentration = 2.36 x 10²¹/cm3, mobility = 4.92 cm2/(V-s) : 15501|1|0|-1
    RHO       :    carrier concentration = 2.36 x 10²¹/cm3, mobility = 4.92 cm2/(V-s) : 15501|2|0|-1
    SIGMA    :    carrier concentration = 2.36 x 10²¹/cm3, mobility = 4.92 cm2/(V-s) : 15501|10|0|-1
    S         :    carrier concentration = 2.36 x 10²¹/cm3, mobility = 4.92 cm2/(V-s) : 15501|48|0|-1

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NdFe₃CoSb₁₂ (New)

    TC        :    carrier concentration = 1.61 x 10²¹/cm3, mobility = 5.54 cm2/(V-s) : 15504|1|0|-1
    RHO       :    carrier concentration = 1.61 x 10²¹/cm3, mobility = 5.54 cm2/(V-s) : 15504|2|0|-1
    SIGMA    :    carrier concentration = 1.61 x 10²¹/cm3, mobility = 5.54 cm2/(V-s) : 15504|10|0|-1
    S         :    carrier concentration = 1.61 x 10²¹/cm3, mobility = 5.54 cm2/(V-s) : 15504|48|0|-1

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NdFe₄Sb₁₂ (New)

    TC        :    carrier concentration = 3.47 x 10²¹/cm3, mobility = 4.24 cm2/(V-s) : 15498|1|0|-1
    RHO       :    carrier concentration = 3.47 x 10²¹/cm3, mobility = 4.24 cm2/(V-s) : 15498|2|0|-1
    SIGMA    :    carrier concentration = 3.47 x 10²¹/cm3, mobility = 4.24 cm2/(V-s) : 15498|10|0|-1
    S         :    carrier concentration = 3.47 x 10²¹/cm3, mobility = 4.24 cm2/(V-s) : 15498|48|0|-1

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Pb₀.₉₅Sb₀.₀₁₅Te + SnSe (New)

    TC        :    undoped : carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 332 cm2/(V-s) : 15559|1|0|0
    TC        :    SnSe doped : 10%, carrier concentration = 3.72 x 10¹⁹/cm3, mobility = 402 cm2/(V-s) : 15559|1|1|0
    TC        :    SnSe doped : 20%, carrier concentration = 1.84 x 10¹⁹/cm3, mobility = 453 cm2/(V-s) : 15559|1|1|1
    TC        :    SnSe doped : 30%, carrier concentration = 0.85 x 10¹⁹/cm3, mobility = 529 cm2/(V-s) : 15559|1|1|2
    TC        :    SnSe doped : 35%, carrier concentration = 0.46 x 10¹⁹/cm3, mobility = 548 cm2/(V-s) : 15559|1|1|3
    RHO       :    undoped : carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 332 cm2/(V-s) : 15559|2|0|0
    RHO       :    SnSe doped : 10%, carrier concentration = 3.72 x 10¹⁹/cm3, mobility = 402 cm2/(V-s) : 15559|2|1|0
    RHO       :    SnSe doped : 20%, carrier concentration = 1.84 x 10¹⁹/cm3, mobility = 453 cm2/(V-s) : 15559|2|1|1
    RHO       :    SnSe doped : 30%, carrier concentration = 0.85 x 10¹⁹/cm3, mobility = 529 cm2/(V-s) : 15559|2|1|2
    RHO       :    SnSe doped : 35%, carrier concentration = 0.46 x 10¹⁹/cm3, mobility = 548 cm2/(V-s) : 15559|2|1|3
    SIGMA    :    undoped : carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 332 cm2/(V-s) : 15559|10|0|0
    SIGMA    :    SnSe doped : 10%, carrier concentration = 3.72 x 10¹⁹/cm3, mobility = 402 cm2/(V-s) : 15559|10|1|0
    SIGMA    :    SnSe doped : 20%, carrier concentration = 1.84 x 10¹⁹/cm3, mobility = 453 cm2/(V-s) : 15559|10|1|1
    SIGMA    :    SnSe doped : 30%, carrier concentration = 0.85 x 10¹⁹/cm3, mobility = 529 cm2/(V-s) : 15559|10|1|2
    SIGMA    :    SnSe doped : 35%, carrier concentration = 0.46 x 10¹⁹/cm3, mobility = 548 cm2/(V-s) : 15559|10|1|3
    S         :    undoped : carrier concentration = 4.7 x 10¹⁹/cm3, mobility = 332 cm2/(V-s) : 15559|48|0|0
    S         :    SnSe doped : 10%, carrier concentration = 3.72 x 10¹⁹/cm3, mobility = 402 cm2/(V-s) : 15559|48|1|0
    S         :    SnSe doped : 20%, carrier concentration = 1.84 x 10¹⁹/cm3, mobility = 453 cm2/(V-s) : 15559|48|1|1
    S         :    SnSe doped : 30%, carrier concentration = 0.85 x 10¹⁹/cm3, mobility = 529 cm2/(V-s) : 15559|48|1|2
    S         :    SnSe doped : 35%, carrier concentration = 0.46 x 10¹⁹/cm3, mobility = 548 cm2/(V-s) : 15559|48|1|3

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Pb₀.₉₈Na₀.₀₂Te + MgTe (New)

    TC        :    undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15484|1|0|0
    TC        :    MgTe doped : 1%, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 93 cm2/(V-s) : 15484|1|1|0
    TC        :    MgTe doped : 2%, carrier concentration = 1.02 x 10²⁰/cm3, mobility = 90 cm2/(V-s) : 15484|1|1|1
    TC        :    MgTe doped : 4%, carrier concentration = 1.01 x 10²⁰/cm3, mobility = 91 cm2/(V-s) : 15484|1|1|2
    TC        :    MgTe doped : 5%, carrier concentration = 9.2 x 10¹⁹/cm3, mobility = 86 cm2/(V-s) : 15484|1|1|3
    TC        :    MgTe doped : 6%, carrier concentration = 8.7 x 10¹⁹/cm3, mobility = 82 cm2/(V-s) : 15484|1|1|4
    TC        :    MgTe doped : 8%, carrier concentration = 8.8 x 10¹⁹/cm3, mobility = 70 cm2/(V-s) : 15484|1|1|5
    RHO       :    undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15484|2|0|0
    RHO       :    MgTe doped : 1%, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 93 cm2/(V-s) : 15484|2|1|0
    RHO       :    MgTe doped : 2%, carrier concentration = 1.02 x 10²⁰/cm3, mobility = 90 cm2/(V-s) : 15484|2|1|1
    RHO       :    MgTe doped : 4%, carrier concentration = 1.01 x 10²⁰/cm3, mobility = 91 cm2/(V-s) : 15484|2|1|2
    RHO       :    MgTe doped : 5%, carrier concentration = 9.2 x 10¹⁹/cm3, mobility = 86 cm2/(V-s) : 15484|2|1|3
    RHO       :    MgTe doped : 6%, carrier concentration = 8.7 x 10¹⁹/cm3, mobility = 82 cm2/(V-s) : 15484|2|1|4
    RHO       :    MgTe doped : 8%, carrier concentration = 8.8 x 10¹⁹/cm3, mobility = 70 cm2/(V-s) : 15484|2|1|5
    SH        :    undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15484|9|0|0
    SH        :    MgTe doped : 1%, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 93 cm2/(V-s) : 15484|9|1|0
    SH        :    MgTe doped : 2%, carrier concentration = 1.02 x 10²⁰/cm3, mobility = 90 cm2/(V-s) : 15484|9|1|1
    SH        :    MgTe doped : 4%, carrier concentration = 1.01 x 10²⁰/cm3, mobility = 91 cm2/(V-s) : 15484|9|1|2
    SH        :    MgTe doped : 5%, carrier concentration = 9.2 x 10¹⁹/cm3, mobility = 86 cm2/(V-s) : 15484|9|1|3
    SH        :    MgTe doped : 6%, carrier concentration = 8.7 x 10¹⁹/cm3, mobility = 82 cm2/(V-s) : 15484|9|1|4
    SH        :    MgTe doped : 8%, carrier concentration = 8.8 x 10¹⁹/cm3, mobility = 70 cm2/(V-s) : 15484|9|1|5
    SIGMA    :    undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15484|10|0|0
    SIGMA    :    MgTe doped : 1%, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 93 cm2/(V-s) : 15484|10|1|0
    SIGMA    :    MgTe doped : 2%, carrier concentration = 1.02 x 10²⁰/cm3, mobility = 90 cm2/(V-s) : 15484|10|1|1
    SIGMA    :    MgTe doped : 4%, carrier concentration = 1.01 x 10²⁰/cm3, mobility = 91 cm2/(V-s) : 15484|10|1|2
    SIGMA    :    MgTe doped : 5%, carrier concentration = 9.2 x 10¹⁹/cm3, mobility = 86 cm2/(V-s) : 15484|10|1|3
    SIGMA    :    MgTe doped : 6%, carrier concentration = 8.7 x 10¹⁹/cm3, mobility = 82 cm2/(V-s) : 15484|10|1|4
    SIGMA    :    MgTe doped : 8%, carrier concentration = 8.8 x 10¹⁹/cm3, mobility = 70 cm2/(V-s) : 15484|10|1|5
    D     (*):    undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15484|24|0|0
    D     (*):    MgTe doped : 1%, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 93 cm2/(V-s) : 15484|24|1|0
    D     (*):    MgTe doped : 2%, carrier concentration = 1.02 x 10²⁰/cm3, mobility = 90 cm2/(V-s) : 15484|24|1|1
    D     (*):    MgTe doped : 4%, carrier concentration = 1.01 x 10²⁰/cm3, mobility = 91 cm2/(V-s) : 15484|24|1|2
    D     (*):    MgTe doped : 5%, carrier concentration = 9.2 x 10¹⁹/cm3, mobility = 86 cm2/(V-s) : 15484|24|1|3
    D     (*):    MgTe doped : 6%, carrier concentration = 8.7 x 10¹⁹/cm3, mobility = 82 cm2/(V-s) : 15484|24|1|4
    D     (*):    MgTe doped : 8%, carrier concentration = 8.8 x 10¹⁹/cm3, mobility = 70 cm2/(V-s) : 15484|24|1|5
    TD        :    undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15484|25|0|0
    TD        :    MgTe doped : 1%, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 93 cm2/(V-s) : 15484|25|1|0
    TD        :    MgTe doped : 2%, carrier concentration = 1.02 x 10²⁰/cm3, mobility = 90 cm2/(V-s) : 15484|25|1|1
    TD        :    MgTe doped : 4%, carrier concentration = 1.01 x 10²⁰/cm3, mobility = 91 cm2/(V-s) : 15484|25|1|2
    TD        :    MgTe doped : 5%, carrier concentration = 9.2 x 10¹⁹/cm3, mobility = 86 cm2/(V-s) : 15484|25|1|3
    TD        :    MgTe doped : 6%, carrier concentration = 8.7 x 10¹⁹/cm3, mobility = 82 cm2/(V-s) : 15484|25|1|4
    TD        :    MgTe doped : 8%, carrier concentration = 8.8 x 10¹⁹/cm3, mobility = 70 cm2/(V-s) : 15484|25|1|5
    S         :    undoped : carrier concentration = 1.21 x 10²⁰/cm3, mobility = 95 cm2/(V-s) : 15484|48|0|0
    S         :    MgTe doped : 1%, carrier concentration = 1.11 x 10²⁰/cm3, mobility = 93 cm2/(V-s) : 15484|48|1|0
    S         :    MgTe doped : 2%, carrier concentration = 1.02 x 10²⁰/cm3, mobility = 90 cm2/(V-s) : 15484|48|1|1
    S         :    MgTe doped : 4%, carrier concentration = 1.01 x 10²⁰/cm3, mobility = 91 cm2/(V-s) : 15484|48|1|2
    S         :    MgTe doped : 5%, carrier concentration = 9.2 x 10¹⁹/cm3, mobility = 86 cm2/(V-s) : 15484|48|1|3
    S         :    MgTe doped : 6%, carrier concentration = 8.7 x 10¹⁹/cm3, mobility = 82 cm2/(V-s) : 15484|48|1|4
    S         :    MgTe doped : 8%, carrier concentration = 8.8 x 10¹⁹/cm3, mobility = 70 cm2/(V-s) : 15484|48|1|5

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PbS

    SIGMA (N):    nanopowder : AC at 0.1 Hz : 5873|10|0|0
    SIGMA (N):    nanopowder : AC at 1 Hz : 5873|10|0|1
    SIGMA (N):    nanopowder : AC at 10 Hz : 5873|10|0|2
    SIGMA (N):    nanopowder : AC at 100 Hz : 5873|10|0|3
    SIGMA (N):    nanopowder : AC at 1 kHz : 5873|10|0|4
    SIGMA (N):    nanopowder : AC at 10 kHz : 5873|10|0|5
    DF     (N):    nanopowder : tested at 25 °C (77 °F) : 5873|42|0|0
    DF     (N):    nanopowder : tested at 50 °C (122 °F) : 5873|42|0|1
    DF     (N):    nanopowder : tested at 75 °C (167 °F) : 5873|42|0|2
    DF     (N):    nanopowder : tested at 100 °C (212 °F) : 5873|42|0|3
    DF     (N):    nanopowder : tested at 125 °C (257 °F) : 5873|42|0|4
    DF     (N):    nanopowder : tested at 150 °C (302 °F) : 5873|42|0|5

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PbSe

    TC     (N):    thin film : atomic layer deposited, 127 nm : 2513|1|1|0
    RHO    (N):    single crystal : 2513|2|0|-1
    SIGMA (N):    single crystal : 2513|10|0|-1
    S      (N):    single crystal : 2513|48|0|-1

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PbTe (Al doped) (New)

    TC        :    undoped : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15556|1|0|0
    TC        :    Al doped : 0.01 Al, carrier concentration = 1.59 x 10¹⁹/cm3 : 15556|1|1|0
    TC        :    Al doped : 0.02 Al, carrier concentration = 1.9 x 10¹⁹/cm3 : 15556|1|1|1
    TC        :    Al doped : 0.03 Al, carrier concentration = 2.42 x 10¹⁹/cm3 : 15556|1|1|2
    TC        :    Al doped : 0.04 Al, carrier concentration = 2.8 x 10¹⁹/cm3 : 15556|1|1|3
    RHO       :    undoped : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15556|2|0|0
    RHO       :    Al doped : 0.01 Al, carrier concentration = 1.59 x 10¹⁹/cm3 : 15556|2|1|0
    RHO       :    Al doped : 0.02 Al, carrier concentration = 1.9 x 10¹⁹/cm3 : 15556|2|1|1
    RHO       :    Al doped : 0.03 Al, carrier concentration = 2.42 x 10¹⁹/cm3 : 15556|2|1|2
    RHO       :    Al doped : 0.04 Al, carrier concentration = 2.8 x 10¹⁹/cm3 : 15556|2|1|3
    SH        :    undoped : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15556|9|0|0
    SH        :    Al doped : 0.01 Al, carrier concentration = 1.59 x 10¹⁹/cm3 : 15556|9|1|0
    SH        :    Al doped : 0.02 Al, carrier concentration = 1.9 x 10¹⁹/cm3 : 15556|9|1|1
    SH        :    Al doped : 0.03 Al, carrier concentration = 2.42 x 10¹⁹/cm3 : 15556|9|1|2
    SIGMA    :    undoped : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15556|10|0|0
    SIGMA    :    Al doped : 0.01 Al, carrier concentration = 1.59 x 10¹⁹/cm3 : 15556|10|1|0
    SIGMA    :    Al doped : 0.02 Al, carrier concentration = 1.9 x 10¹⁹/cm3 : 15556|10|1|1
    SIGMA    :    Al doped : 0.03 Al, carrier concentration = 2.42 x 10¹⁹/cm3 : 15556|10|1|2
    SIGMA    :    Al doped : 0.04 Al, carrier concentration = 2.8 x 10¹⁹/cm3 : 15556|10|1|3
    HC        :    undoped : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15556|17|0|0
    TD        :    undoped : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15556|25|0|0
    TD        :    Al doped : 0.01 Al, carrier concentration = 1.59 x 10¹⁹/cm3 : 15556|25|1|0
    TD        :    Al doped : 0.02 Al, carrier concentration = 1.9 x 10¹⁹/cm3 : 15556|25|1|1
    TD        :    Al doped : 0.03 Al, carrier concentration = 2.42 x 10¹⁹/cm3 : 15556|25|1|2
    TD        :    Al doped : 0.04 Al, carrier concentration = 2.8 x 10¹⁹/cm3 : 15556|25|1|3
    S         :    undoped : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15556|48|0|0
    S         :    Al doped : 0.01 Al, carrier concentration = 1.59 x 10¹⁹/cm3 : 15556|48|1|0
    S         :    Al doped : 0.02 Al, carrier concentration = 1.9 x 10¹⁹/cm3 : 15556|48|1|1
    S         :    Al doped : 0.03 Al, carrier concentration = 2.42 x 10¹⁹/cm3 : 15556|48|1|2
    S         :    Al doped : 0.04 Al, carrier concentration = 2.8 x 10¹⁹/cm3 : 15556|48|1|3

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PbTe (Sb doped)

    TC     (N):    undoped, cast : Liu et. al. : 2515|1|1|0
    TC     (N):    Sb doped : 0.5% Sb, carrier concentration = 2 x 10¹⁸/cm3 : 2515|1|2|0
    TC     (N):    Sb doped : 1% Sb, carrier concentration = 5.5 x 10¹⁸/cm3 : 2515|1|2|1
    TC     (N):    Sb doped : 1.5% Sb, carrier concentration = 7.4 x 10¹⁸/cm3 : 2515|1|2|2
    TC     (N):    Sb doped : 2% Sb, carrier concentration = 1 x 10¹⁹/cm3 : 2515|1|2|3
    RHO    (N):    undoped, cast : Liu et. al. : 2515|2|3|0
    RHO    (N):    Sb doped : 0.5% Sb, carrier concentration = 2 x 10¹⁸/cm3 : 2515|2|4|0
    RHO    (N):    Sb doped : 1% Sb, carrier concentration = 5.5 x 10¹⁸/cm3 : 2515|2|4|1
    RHO    (N):    Sb doped : 1.5% Sb, carrier concentration = 7.4 x 10¹⁸/cm3 : 2515|2|4|2
    RHO    (N):    Sb doped : 2% Sb, carrier concentration = 1 x 10¹⁹/cm3 : 2515|2|4|3
    SIGMA (N):    undoped, cast : Liu et. al. : 2515|10|3|0
    SIGMA (N):    Sb doped : 0.5% Sb, carrier concentration = 2 x 10¹⁸/cm3 : 2515|10|4|0
    SIGMA (N):    Sb doped : 1% Sb, carrier concentration = 5.5 x 10¹⁸/cm3 : 2515|10|4|1
    SIGMA (N):    Sb doped : 1.5% Sb, carrier concentration = 7.4 x 10¹⁸/cm3 : 2515|10|4|2
    SIGMA (N):    Sb doped : 2% Sb, carrier concentration = 1 x 10¹⁹/cm3 : 2515|10|4|3
    D     (R*):    solid : 2515|24|0|-1
    TD     (N):    Sb doped : 0.5% Sb, carrier concentration = 2 x 10¹⁸/cm3 : 2515|25|1|0
    TD     (N):    Sb doped : 1% Sb, carrier concentration = 5.5 x 10¹⁸/cm3 : 2515|25|1|1
    TD     (N):    Sb doped : 1.5% Sb, carrier concentration = 7.4 x 10¹⁸/cm3 : 2515|25|1|2
    TD     (N):    Sb doped : 2% Sb, carrier concentration = 1 x 10¹⁹/cm3 : 2515|25|1|3
    S      (N):    undoped, cast : Liu et. al. : 2515|48|3|0
    S      (N):    Sb doped : 0.5%, carrier concentration = 2 x 10¹⁸/cm3 : 2515|48|4|0
    S      (N):    Sb doped : 1% Sb, carrier concentration = 5.5 x 10¹⁸/cm3 : 2515|48|4|1
    S      (N):    Sb doped : 1.5% Sb, carrier concentration = 7.4 x 10¹⁸/cm3 : 2515|48|4|2
    S      (N):    Sb doped : 2% Sb, carrier concentration = 1 x 10¹⁹/cm3 : 2515|48|4|3

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PbTe (Sb/Se co-doped) (New)

    TC        :    undoped : nanopowder : 15561|1|0|0
    TC        :    6.25 Sb + 4.58 Se doped : nanopowder : 15561|1|1|0
    RHO       :    undoped : nanopowder : 15561|2|0|0
    RHO       :    6.25 Sb + 4.58 Se doped : nanopowder : 15561|2|1|0
    SIGMA    :    undoped : nanopowder : 15561|10|0|0
    SIGMA    :    6.25 Sb + 4.58 Se doped : nanopowder : 15561|10|1|0
    S         :    undoped : nanopowder : 15561|48|0|0
    S         :    6.25 Sb + 4.58 Se doped : nanopowder : 15561|48|1|0

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PbTe (Se doped) (New)

    RHO       :    undoped, thin film : 15550|2|0|-1
    RHO       :    Se doped, thin film : 6% Se : 15550|2|2|0
    RHO       :    Se doped, thin film : 10% Se : 15550|2|2|1
    RHO       :    Se doped, thin film : 15% Se : 15550|2|2|2
    SIGMA    :    undoped, thin film : 15550|10|0|-1
    SIGMA    :    Se doped, thin film : 6% Se : 15550|10|2|0
    SIGMA    :    Se doped, thin film : 10% Se : 15550|10|2|1
    SIGMA    :    Se doped, thin film : 15% Se : 15550|10|2|2
    S     (*):    undoped, thin film : 15550|48|0|-1
    S     (*):    Se doped, thin film : 6% Se : 15550|48|2|0
    S     (*):    Se doped, thin film : 10% Se : 15550|48|2|1
    S     (*):    Se doped, thin film : 15% Se : 15550|48|2|2

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PbTe (Tl doped) (New)

    TC        :    undoped : single crystal : 15465|1|0|0
    TC        :    Tl doped : 0.05 at%, single crystal : 15465|1|1|0
    TC        :    Tl doped : 0.1 at%, single crystal : 15465|1|1|1
    TC        :    Tl doped : 0.2 at%, single crystal : 15465|1|1|2
    TC        :    Tl doped : 0.4 at%, single crystal : 15465|1|1|3

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PbTe + Cu₂Se composites (New)

    TC        :    undoped : carrier concentration = 1.6 x 10¹⁸/cm3 : 15468|1|0|0
    TC        :    Cu2Se composite : 1 vol% Cu2Se, carrier concentration = 6.77 x 10¹⁷/cm3 : 15468|1|1|0
    TC        :    Cu2Se composite : 3 vol% Cu2Se, carrier concentration = 1.56 x 10¹⁷/cm3 : 15468|1|1|1
    TC        :    Cu2Se composite : 5 vol% Cu2Se, carrier concentration = 1.84 x 10¹⁷/cm3 : 15468|1|1|2
    TC        :    Cu2Se composite : 7 vol% Cu2Se, carrier concentration = 4.47 x 10¹⁷/cm3 : 15468|1|1|3
    RHO       :    undoped : carrier concentration = 1.6 x 10¹⁸/cm3 : 15468|2|0|0
    RHO       :    Cu2Se composite : 1 vol% Cu2Se, carrier concentration = 6.77 x 10¹⁷/cm3 : 15468|2|1|0
    RHO       :    Cu2Se composite : 3 vol% Cu2Se, carrier concentration = 1.56 x 10¹⁷/cm3 : 15468|2|1|1
    RHO       :    Cu2Se composite : 5 vol% Cu2Se, carrier concentration = 1.84 x 10¹⁷/cm3 : 15468|2|1|2
    RHO       :    Cu2Se composite : 7 vol% Cu2Se, carrier concentration = 4.47 x 10¹⁷/cm3 : 15468|2|1|3
    SIGMA    :    undoped : carrier concentration = 1.6 x 10¹⁸/cm3 : 15468|10|0|0
    SIGMA    :    Cu2Se composite : 1 vol% Cu2Se, carrier concentration = 6.77 x 10¹⁷/cm3 : 15468|10|1|0
    SIGMA    :    Cu2Se composite : 3 vol% Cu2Se, carrier concentration = 1.56 x 10¹⁷/cm3 : 15468|10|1|1
    SIGMA    :    Cu2Se composite : 5 vol% Cu2Se, carrier concentration = 1.84 x 10¹⁷/cm3 : 15468|10|1|2
    SIGMA    :    Cu2Se composite : 7 vol% Cu2Se, carrier concentration = 4.47 x 10¹⁷/cm3 : 15468|10|1|3
    TD        :    undoped : carrier concentration = 1.6 x 10¹⁸/cm3 : 15468|25|0|0
    TD        :    Cu2Se composite : 1 vol% Cu2Se, carrier concentration = 6.77 x 10¹⁷/cm3 : 15468|25|1|0
    TD        :    Cu2Se composite : 3 vol% Cu2Se, carrier concentration = 1.56 x 10¹⁷/cm3 : 15468|25|1|1
    TD        :    Cu2Se composite : 5 vol% Cu2Se, carrier concentration = 1.84 x 10¹⁷/cm3 : 15468|25|1|2
    TD        :    Cu2Se composite : 7 vol% Cu2Se, carrier concentration = 4.47 x 10¹⁷/cm3 : 15468|25|1|3
    S         :    undoped : carrier concentration = 1.6 x 10¹⁸/cm3 : 15468|48|0|0
    S         :    Cu2Se composite : 1 vol% Cu2Se, carrier concentration = 6.77 x 10¹⁷/cm3 : 15468|48|1|0
    S         :    Cu2Se composite : 3 vol% Cu2Se, carrier concentration = 1.56 x 10¹⁷/cm3 : 15468|48|1|1
    S         :    Cu2Se composite : 5 vol% Cu2Se, carrier concentration = 1.84 x 10¹⁷/cm3 : 15468|48|1|2
    S         :    Cu2Se composite : 7 vol% Cu2Se, carrier concentration = 4.47 x 10¹⁷/cm3 : 15468|48|1|3

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PbTe

    TC     (N):    cast : Liu et. al. : 15564|1|0|0
    TC     (N):    hot-pressed : carrier concentration = 1.6 x 10¹⁸/cm3 : 15564|1|1|0
    TC     (N):    direct current hot-pressing : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15564|1|2|0
    TC     (N):    single crystal : Akhmedova et.al. : 15564|1|3|0
    TC     (R):    single crystal nano wire : 182 nm diameter : 15564|1|4|1
    TC     (R):    single crystal nano wire : 277 nm diameter : 15564|1|4|2
    TC     (R):    single crystal nano wire : 436 nm diameter : 15564|1|4|3
    TC     (N):    nanopowder : 15564|1|5|-1
    TC     (N):    thin film : atomic layer deposited, 33 nm : 15564|1|6|0
    RHO    (N):    cast : Liu et. al. : 15564|2|0|0
    RHO    (N):    hot-pressed : carrier concentration = 3.98 x 10¹⁸/cm3, mobility = 0.63 cm2/(V-s) : 15564|2|1|0
    RHO    (N):    hot-pressed : carrier concentration = 1.6 x 10¹⁸/cm3 : 15564|2|1|1
    RHO    (N):    direct current hot-pressing : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15564|2|3|0
    RHO    (N):    single crystal nano wire : 140 nm diameter : 15564|2|4|1
    RHO    (N):    nanopowder : DC, 75 nm diameter : 15564|2|5|0
    RHO    (N):    thin film : 15564|2|6|-1
    E     (N*):    solid : 15564|3|0|-1
    SH     (N):    carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15564|9|1|-1
    SIGMA (N):    cast : Liu et. al. : 15564|10|0|0
    SIGMA (N):    hot-pressed : carrier concentration = 3.98 x 10¹⁸/cm3, mobility = 0.63 cm2/(V-s) : 15564|10|1|0
    SIGMA (N):    hot-pressed : carrier concentration = 1.6 x 10¹⁸/cm3 : 15564|10|1|1
    SIGMA (N):    direct current hot-pressing : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15564|10|3|0
    SIGMA (N):    single crystal nano wire : 140 nm diameter : 15564|10|4|1
    SIGMA (N):    nanopowder : DC, 75 nm diameter : 15564|10|5|0
    SIGMA (N):    nanopowder : AC at 0.1 Hz : 15564|10|5|1
    SIGMA (N):    nanopowder : AC at 1 Hz : 15564|10|5|2
    SIGMA (N):    nanopowder : AC at 10 Hz : 15564|10|5|3
    SIGMA (N):    nanopowder : AC at 100 Hz : 15564|10|5|4
    SIGMA (N):    nanopowder : AC at 1 kHz : 15564|10|5|5
    SIGMA (N):    nanopowder : AC at 10 kHz : 15564|10|5|6
    SIGMA (N):    thin film : 15564|10|6|-1
    HC     (N):    carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15564|17|1|-1
    D     (R*):    solid : 15564|24|0|-1
    TD     (N):    hot-pressed : carrier concentration = 1.6 x 10¹⁸/cm3 : 15564|25|0|0
    TD     (N):    direct current hot-pressing : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15564|25|1|0
    TD     (R):    single crystal nano wire : 75 nm diameter : 15564|25|2|0
    DF     (N):    nanopowder : tested at 25 °C (77 °F) : 15564|42|0|0
    DF     (N):    nanopowder : tested at 50 °C (122 °F) : 15564|42|0|1
    DF     (N):    nanopowder : tested at 75 °C (167 °F) : 15564|42|0|2
    DF     (N):    nanopowder : tested at 100 °C (212 °F) : 15564|42|0|3
    DF     (N):    nanopowder : tested at 125 °C (257 °F) : 15564|42|0|4
    DF     (N):    nanopowder : tested at 150 °C (302 °F) : 15564|42|0|5
    S      (N):    cast : Liu et. al. : 15564|48|0|0
    S      (N):    hot-pressed : carrier concentration = 3.98 x 10¹⁸/cm3, mobility = 0.63 cm2/(V-s) : 15564|48|1|0
    S      (N):    hot-pressed : carrier concentration = 1.6 x 10¹⁸/cm3 : 15564|48|1|1
    S      (N):    direct current hot-pressing : carrier concentration = 2 x 10¹⁸/cm3, Zhang et. al. : 15564|48|3|0
    S      (N):    single crystal nano wire : 136 nm diameter : 15564|48|4|1
    S      (N):    nanopowder : 15564|48|5|-1
    S     (N*):    thin film : 15564|48|6|-1

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PtSb₂ (Te doped) (New)

    TC        :    undoped : 15457|1|0|-1
    TC        :    doped : 0.0002 Te : 15457|1|1|0
    TC        :    doped : 0.0005 Te : 15457|1|1|1
    TC        :    doped : 0.001 Te : 15457|1|1|2
    TC        :    doped : 0.002 Te : 15457|1|1|3
    TC        :    doped : 0.005 Te : 15457|1|1|4
    TC        :    doped : 0.02 Te : 15457|1|1|5
    TC        :    doped : 0.04 Te : 15457|1|1|6
    RHO       :    undoped : 15457|2|0|-1
    RHO       :    doped : 0.0002 Te : 15457|2|1|0
    RHO       :    doped : 0.0005 Te : 15457|2|1|1
    RHO       :    doped : 0.001 Te : 15457|2|1|2
    RHO       :    doped : 0.002 Te : 15457|2|1|3
    RHO       :    doped : 0.005 Te : 15457|2|1|4
    RHO       :    doped : 0.02 Te : 15457|2|1|5
    RHO       :    doped : 0.04 Te : 15457|2|1|6
    SIGMA    :    undoped : 15457|10|0|-1
    SIGMA    :    doped : 0.0002 Te : 15457|10|1|0
    SIGMA    :    doped : 0.0005 Te : 15457|10|1|1
    SIGMA    :    doped : 0.001 Te : 15457|10|1|2
    SIGMA    :    doped : 0.002 Te : 15457|10|1|3
    SIGMA    :    doped : 0.005 Te : 15457|10|1|4
    SIGMA    :    doped : 0.02 Te : 15457|10|1|5
    SIGMA    :    doped : 0.04 Te : 15457|10|1|6
    S         :    undoped : 15457|48|0|-1
    S         :    doped : 0.0002 Te : 15457|48|1|0
    S         :    doped : 0.0005 Te : 15457|48|1|1
    S         :    doped : 0.001 Te : 15457|48|1|2
    S         :    doped : 0.002 Te : 15457|48|1|3
    S         :    doped : 0.005 Te : 15457|48|1|4
    S         :    doped : 0.02 Te : 15457|48|1|5
    S         :    doped : 0.04 Te : 15457|48|1|6

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Sb₂Se₃ (New)

    RIW       :    84 nm thick film (RF-sputtered), measured in air : tested at 20 °C (68 °F) : 15555|45|0|0

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Sb₂Te₃ (dopants) (New)

    RHO       :    Lu doped : 0.06 Lu : 14622|2|0|0
    RHO       :    Er doped : 0.04 Er : 14622|2|1|0
    RHO       :    Ho doped : 0.04 Ho : 14622|2|2|0
    SIGMA    :    Lu doped : 0.06 Lu : 14622|10|0|0
    SIGMA    :    Er doped : 0.04 Er : 14622|10|1|0
    SIGMA    :    Ho doped : 0.04 Ho : 14622|10|2|0

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Sb₂Te₃

    RHO    (N):    thin film : 800 nm thick, as-deposited : 15566|2|0|3
    RHO    (N):    thin film : 800 nm thick, annealed : 15566|2|0|4
    RHO    (N):    thin film : thermal evaporated : 15566|2|0|5
    RHO    (N):    thin film : epitaxially grown single crystal film, annealed : 15566|2|0|6
    SIGMA (N):    thin film : 800 nm thick, as-deposited : 15566|10|0|3
    SIGMA (N):    thin film : 800 nm thick, annealed : 15566|10|0|4
    SIGMA (N):    thin film : thermal evaporated : 15566|10|0|5
    SIGMA (N):    thin film : epitaxially grown single crystal film, annealed : 15566|10|0|6
    RIW    (N):    79 nm thick film (RF-sputtered), measured in air : tested at 20 °C (68 °F) : 15566|45|1|0
    S      (N):    thin film : 800 nm thick, as-deposited : 15566|48|0|2
    S      (N):    thin film : 800 nm thick, annealed : 15566|48|0|3
    S      (N):    thin film : epitaxially grown single crystal film, annealed : 15566|48|0|4
    S      (N):    single crystal : parallel to c-axis : 15566|48|1|0
    S      (N):    single crystal : perpendicular to c-axis : 15566|48|1|1

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SnSe

    RHO    (N):    bulk material : 2518|2|0|-1
    RHO    (N):    thin film : deposited at RT : 2518|2|1|0
    RHO    (N):    thin film : deposited at 100 °C (212 °F) : 2518|2|1|1
    RHO    (N):    thin film : deposited at 200 °C (392 °F) : 2518|2|1|2
    RHO    (N):    thin film : deposited at 300 °C (572 °F) : 2518|2|1|3
    RHO    (N):    thin film : deposited at 400 °C (752 °F) : 2518|2|1|4
    RHO    (N):    thin film : deposited at 500 °C (932 °F) : 2518|2|1|5
    SIGMA (N):    bulk material : 2518|10|0|-1
    SIGMA (N):    thin film : deposited at RT : 2518|10|1|0
    SIGMA (N):    thin film : deposited at 100 °C (212 °F) : 2518|10|1|1
    SIGMA (N):    thin film : deposited at 200 °C (392 °F) : 2518|10|1|2
    SIGMA (N):    thin film : deposited at 300 °C (572 °F) : 2518|10|1|3
    SIGMA (N):    thin film : deposited at 400 °C (752 °F) : 2518|10|1|4
    SIGMA (N):    thin film : deposited at 500 °C (932 °F) : 2518|10|1|5
    S      (N):    bulk material : 2518|48|0|-1
    S      (N):    thin film : deposited at RT : 2518|48|1|0
    S      (N):    thin film : deposited at 100 °C (212 °F) : 2518|48|1|1
    S      (N):    thin film : deposited at 200 °C (392 °F) : 2518|48|1|2
    S      (N):    thin film : deposited at 300 °C (572 °F) : 2518|48|1|3
    S      (N):    thin film : deposited at 400 °C (752 °F) : 2518|48|1|4
    S      (N):    thin film : deposited at 500 °C (932 °F) : 2518|48|1|5

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SnTe (Sb doped)

    TC     (N):    undoped : carrier concentration = 1.64 x 10²⁰/cm3, mobility = 223 cm2/(V-s) : 2519|1|0|0
    TC     (N):    Sb doped : 0.05 Sn : 2519|1|1|0
    RHO    (N):    undoped : carrier concentration = 1.64 x 10²⁰/cm3, mobility = 223 cm2/(V-s) : 2519|2|0|0
    RHO    (N):    Sb doped : 0.05 Sn : 2519|2|1|0
    SIGMA (N):    undoped : carrier concentration = 1.64 x 10²⁰/cm3, mobility = 223 cm2/(V-s) : 2519|10|0|0
    SIGMA (N):    Sb doped : 0.05 Sn : 2519|10|1|0
    TD     (N):    solid : 2519|25|0|-1
    S      (N):    undoped : carrier concentration = 1.64 x 10²⁰/cm3, mobility = 223 cm2/(V-s) : 2519|48|0|0
    S      (N):    Sb doped : 0.05 Sn : 2519|48|1|0

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SrTiO₃ - 0.1 La₀.₃₃NbO₃ (New)

    TC        :    solid : 15478|1|0|-1
    RHO       :    solid : 15478|2|0|-1
    SIGMA    :    solid : 15478|10|0|-1
    S         :    solid : 15478|48|0|-1

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SrTiO₃ - 0.2 La₀.₃₃NbO₃ (New)

    TC        :    solid : 15479|1|0|-1
    RHO       :    solid : 15479|2|0|-1
    SIGMA    :    solid : 15479|10|0|-1
    S         :    solid : 15479|48|0|-1

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SrTiO₃ - 0.3 La₀.₃₃NbO₃ (New)

    TC        :    solid : 15480|1|0|-1
    RHO       :    solid : 15480|2|0|-1
    SIGMA    :    solid : 15480|10|0|-1
    S         :    solid : 15480|48|0|-1

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SrTiO₃

    TC     (N):    solid : Srivastava et. al. : 1311|1|0|1
    RHO    (N):    solid : Srivastava et. al. : 1311|2|0|1
    SIGMA (N):    solid : Srivastava et. al. : 1311|10|0|1
    TD     (N):    solid : Srivastava et. al. : 1311|25|0|1
    S      (N):    solid : 1311|48|0|-1

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Tl₀.₂Fe₁.₅Co₂.₅Sb₁₂ (New)

    TC        :    carrier concentration = 3 x 10²⁰/cm3, mobility = 29 cm2/(V-s) : 15473|1|0|-1
    RHO       :    carrier concentration = 3 x 10²⁰/cm3, mobility = 29 cm2/(V-s) : 15473|2|0|-1
    SIGMA    :    carrier concentration = 3 x 10²⁰/cm3, mobility = 29 cm2/(V-s) : 15473|10|0|-1
    D     (*):    solid : 15473|24|0|-1
    S         :    carrier concentration = 3 x 10²⁰/cm3, mobility = 29 cm2/(V-s) : 15473|48|0|-1

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Tl₀.₄Fe₁.₅Co₂.₅Sb₁₂ (New)

    TC        :    carrier concentration = 6.4 x 10²⁰/cm3, mobility = 12 cm2/(V-s) : 15474|1|0|-1
    RHO       :    carrier concentration = 6.4 x 10²⁰/cm3, mobility = 12 cm2/(V-s) : 15474|2|0|-1
    SIGMA    :    carrier concentration = 6.4 x 10²⁰/cm3, mobility = 12 cm2/(V-s) : 15474|10|0|-1
    D     (*):    solid : 15474|24|0|-1
    S         :    carrier concentration = 6.4 x 10²⁰/cm3, mobility = 12 cm2/(V-s) : 15474|48|0|-1

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Tl₀.₅Fe₁.₅Co₂.₅Sb₁₂ (New)

    TC        :    carrier concentration = 1 x 10²¹/cm3, mobility = 8 cm2/(V-s) : 15475|1|0|-1
    RHO       :    carrier concentration = 1 x 10²¹/cm3, mobility = 8 cm2/(V-s) : 15475|2|0|-1
    SIGMA    :    carrier concentration = 1 x 10²¹/cm3, mobility = 8 cm2/(V-s) : 15475|10|0|-1
    D     (*):    solid : 15475|24|0|-1
    S         :    carrier concentration = 1 x 10²¹/cm3, mobility = 8 cm2/(V-s) : 15475|48|0|-1

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Tl₀.₆Fe₁.₅Co₂.₅Sb₁₂

    TC     (N):    carrier concentration = 5.8 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15476|1|0|-1
    RHO    (N):    carrier concentration = 5.8 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15476|2|0|-1
    SIGMA (N):    carrier concentration = 5.8 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15476|10|0|-1
    S      (N):    carrier concentration = 5.8 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15476|48|0|-1

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Tl₀.₇Fe₁.₅Co₂.₅Sb₁₂

    TC     (N):    carrier concentration = 4.7 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15477|1|0|-1
    RHO    (N):    carrier concentration = 4.7 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15477|2|0|-1
    SIGMA (N):    carrier concentration = 4.7 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15477|10|0|-1
    S      (N):    carrier concentration = 4.7 x 10²⁰/cm3, mobility = 13 cm2/(V-s) : 15477|48|0|-1

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V₁₇Ge₃₁ (New)

    TC        :    solid : 15534|1|0|-1
    RHO       :    solid : 15534|2|0|-1
    SIGMA    :    solid : 15534|10|0|-1
    D     (*):    solid : 15534|24|0|-1
    S         :    solid : 15534|48|0|-1

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YbAl₃.₁ (New)

    TC        :    solid : 15430|1|0|-1
    RHO       :    solid : 15430|2|0|-1
    SIGMA    :    solid : 15430|10|0|-1
    D     (*):    solid : 15430|24|0|-1
    S         :    solid : 15430|48|0|-1

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YbAl₃.₂ (New)

    TC        :    solid : 15431|1|0|-1
    RHO       :    solid : 15431|2|0|-1
    SIGMA    :    solid : 15431|10|0|-1
    D     (*):    solid : 15431|24|0|-1
    S         :    solid : 15431|48|0|-1

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YbAl₃.₃ (New)

    TC        :    solid : 15432|1|0|-1
    RHO       :    solid : 15432|2|0|-1
    SIGMA    :    solid : 15432|10|0|-1
    D     (*):    solid : 15432|24|0|-1
    S         :    solid : 15432|48|0|-1

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YbAl₃ (New)

    TC        :    solid : 15429|1|0|-1
    RHO       :    solid : 15429|2|0|-1
    SIGMA    :    solid : 15429|10|0|-1
    D     (*):    solid : 15429|24|0|-1
    S         :    solid : 15429|48|0|-1

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